54 research outputs found
Non-volatile bistability effect based on electrically controlled phase transition in scaled magnetic semiconductor nanostructures
We explore the bistability effect in a dimensionally scaled semiconductor
nanostruncture consisting of a diluted magnetic semiconductor quantum dot (QD)
and a reservoir of itinerant holes separated by a barrier. The bistability
stems from the magnetic phase transition in the QD mediated by the changes in
the hole population. Our calculation shows that when properly designed, the
thermodynamic equilibrium of the scaled structure can be achieved at two
different configurations; i.e., the one with the QD in a ferromagnetic state
with a sufficient number of holes and the other with the depopulated QD in a
paramagnetic state. Subsequently, the parameter window suitable for this
bistability formation is discussed along with the the conditions for the
maximum robustness/non-volatility. To examine the issue of scaling, an
estimation of the bistabiity lifetime is made by considering the thermal
fluctuation in the QD hole population via the spontaneous transitions. A
numerical evaluation is carried out for a typical carrier-mediated magnetic
semiconductor (e.g., GaMnAs) as well as for a hypothetical case of high Curie
temperature for potential room temperature operation.Comment: 9 pages, 7 figure
Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors
Considering a general situation where a semiconductor is doped by magnetic
impurities leading to a carrier-induced ferromagnetic exchange coupling between
the impurity moments, we show theoretically the possible generic existence of
three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct
ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an
intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3)
between two ferromagnetic phases, arises from a subtle competition between
indirect exchange induced by thermally activated carriers in an otherwise empty
conduction band versus the exchange coupling existing in the impurity band due
to the bound carriers themselves. We comment on the possibility of observing
such a re-entrance phenomenon in diluted magnetic semiconductors and magnetic
oxides.Comment: 4 pages, 3 figure
Theory of High-Tc Superconductivity: Accurate Predictions of Tc
The superconducting transition temperatures of high-Tc compounds based on
copper, iron, ruthenium and certain organic molecules are discovered to be
dependent on bond lengths, ionic valences, and Coulomb coupling between
electronic bands in adjacent, spatially separated layers [1]. Optimal
transition temperature, denoted as T_c0, is given by the universal expression
; is the spacing between interacting
charges within the layers, \zeta is the distance between interacting layers and
\Lambda is a universal constant, equal to about twice the reduced electron
Compton wavelength (suggesting that Compton scattering plays a role in
pairing). Non-optimum compounds in which sample degradation is evident
typically exhibit Tc < T_c0. For the 31+ optimum compounds tested, the
theoretical and experimental T_c0 agree statistically to within +/- 1.4 K. The
elemental high Tc building block comprises two adjacent and spatially separated
charge layers; the factor e^2/\zeta arises from Coulomb forces between them.
The theoretical charge structure representing a room-temperature superconductor
is also presented.Comment: 7 pages 5 references, 6 figures 1 tabl
Vortex avalanches and magnetic flux fragmentation in superconductors
We report results of numerical simulations of non isothermal dendritic flux
penetration in type-II superconductors. We propose a generic mechanism of
dynamic branching of a propagating hotspot of a flux flow/normal state
triggered by a local heat pulse. The branching occurs when the flux hotspot
reflects from inhomogeneities or the boundary on which magnetization currents
either vanish, or change direction. Then the hotspot undergoes a cascade of
successive splittings, giving rise to a dissipative dendritic-type flux
structure. This dynamic state eventually cools down, turning into a frozen
multi-filamentary pattern of magnetization currents.Comment: 4 pages, 4 figures, accepted to Phys. Rev. Let
Short-Wave Excitations in Non-Local Gross-Pitaevskii Model
It is shown, that a non-local form of the Gross-Pitaevskii equation allows to
describe not only the long-wave excitations, but also the short-wave ones in
the systems with Bose-condensate. At given parameter values, the excitation
spectrum mimics the Landau spectrum of quasi-particle excitations in superfluid
Helium with roton minimum. The excitation wavelength, at which the roton
minimum exists, is close to the inter-particle interaction range. It is shown,
that the existence domain of the spectrum with a roton minimum is reduced, if
one accounts for an inter-particle attraction.Comment: 5 pages, 5 figures, UJP style; presented at Bogolyubov Kyiv
Conference "Modern Problems of Theoretical and Mathematical Physics",
September 15-18, 200
Mechanisms of limitation and nature of field dependence of critical current in HTS epitaxial YBaCuO films
Magnetic field and temperature dependencies of the critical current density, J/sub c/(H/spl par/c, T) were measured by SQUID-magnetometry, ac magnetic susceptibility, and dc transport current techniques in the single-crystalline epitaxially-grown by off-axis dc magnetron sputtering YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) films with J/sub c/(H/spl par/c, 77 K) /spl ges/ 2 /spl middot/ 10/sup 6/ A/cm/sup 2/. The mechanism of vortex depinning from growth-induced linear defects, i.e., out-of-plane edge dislocations in low-angle tilt domain boundaries, is shown to describe quantitatively measured J/sub c/(H/spl par/c, T). The developed model takes into account a statistical distribution of the dislocation domain boundaries ordered in a network as well as the interdislocation spacing within boundaries. Actual structural features of YBCO film known from HREM data turn out to be extracted from J/sub c/(H/spl par/c, T)-curves by a fitting procedure within the proposed model
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