27 research outputs found
Structural, electronic, and dynamical properties of amorphous gallium arsenide: a comparison between two topological models
We present a detailed study of the effect of local chemical ordering on the
structural, electronic, and dynamical properties of amorphous gallium arsenide.
Using the recently-proposed ``activation-relaxation technique'' and empirical
potentials, we have constructed two 216-atom tetrahedral continuous random
networks with different topological properties, which were further relaxed
using tight-binding molecular dynamics. The first network corresponds to the
traditional, amorphous, Polk-type, network, randomly decorated with Ga and As
atoms. The second is an amorphous structure with a minimum of wrong (homopolar)
bonds, and therefore a minimum of odd-membered atomic rings, and thus
corresponds to the Connell-Temkin model. By comparing the structural,
electronic, and dynamical properties of these two models, we show that the
Connell-Temkin network is energetically favored over Polk, but that most
properties are little affected by the differences in topology. We conclude that
most indirect experimental evidence for the presence (or absence) of wrong
bonds is much weaker than previously believed and that only direct structural
measurements, i.e., of such quantities as partial radial distribution
functions, can provide quantitative information on these defects in a-GaAs.Comment: 10 pages, 7 ps figures with eps
Computational analysis of optical absorption efficiency and photothermal effect of Fe3O4/Au and Fe3O4/Ag core/shell spherical nanoparticles for thermoplasmonics applications
Anomalous small-angle X-ray scattering of nanoporous two-phase atomistic models for amorphous silicon–germanium alloys
A review of a phenomenological model for magnetocaloric effect in ferromagnetic materials
Interstitial-fluoride and substitutional-oxygen charge compensations of Er
A detailed crystal-field analysis, based on the Racah' theory, was carried out for the
so-called A, B and G1 isolated charge-compensation centers of Er3+ ion doped in CaF2 crystal.
Three sets of crystal-field parameters were obtained by a least-squares fitting of the optical
data of Er3+ ion diluted in epitaxial Ca1−xErxF2+x thin film. This theoretical analysis confirms
the expected site symmetry for the A center and the site symmetry for the G1 center.
For the B center, however, the site symmetry is not exactly in contrast to what is
believed
