1 research outputs found
Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires
The resistance R of a high density network of 6 nm diameter Bi wires in
porous Vycor glass is studied in order to observe its expected semiconductor
behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies
approximately as ln(1/T), the order-of-magnitude of the resistance rise, as
well as the behavior of the magnetoresistance are consistent with localization
and electron-electron interaction theories of a one-dimensional disordered
conductor in the presence of strong spin-orbit scattering. We show that this
behaviour and the surface-enhanced carrier density may mask the proposed
semimetal-to-semiconductor transition for quantum Bi wires.Comment: 19 pages total, 4 figures; accepted for publication in Phys. Rev.