Understanding the nature of electronic effective mass in double-doped SrTiO3_{3}

We present an approach to tune the effective mass in an oxide semiconductor by a double doping mechanism. We demonstrate this in a model oxide system Sr$_{1-x}$La$_x$TiO$_{3-\delta}$, where we can tune the effective mass ranging from 6--20$\mathrm{m_e}$ as a function of filling or carrier concentration and the scattering mechanism, which are dependent on the chosen lanthanum and oxygen vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr$_{1-x}$La$_x$TiO$_{3-\delta}$. Our method, which shows that the effective mass decreases with carrier concentration, provides a means for understanding the nature of transport processes in oxides, which typically have large effective mass and low electron mobility, contrary to the tradional high mobility semiconductors.Comment: 5 pages with 4 figure

Negative magneto-resistance of electron gas in a quantum well with parabolic potential

We have studied the electrical conductivity of the electron gas in parallel electric and magnetic fields directed along the plane of a parabolic quantum well (across the profile of the potential). We found a general expression for the electrical conductivity applicable for any magnitudes of the magnetic field and the degree of degeneration of the electron gas. A new mechanism of generation of the negative magnetoresistance has been revealed. It has been shown that in a parabolic quantum well with a non-degenerated electron gas the negative magnetoresistance results from spin splitting of the levels of the size quantization.Comment: 15 pages, 3 figure

Oscillations of the Nernst coefficient in bismuth

We calculate the magnetic-field dependence (oscillations) of the Nernst coefficient in bismuth at low temperatures for the case when the magnetic field is directed along the trigonal axis of the crystal. In the calculations we take into account the scattering of the electrons and holes in bismuth on impurities and the dependence of this scattering on the magnetic field. The results of these calculations are compared with the experimental data recently published

Diameter-dependent thermopower of Bi nanowires

We present a study of electronic transport in individual Bi nanowires of large diameter relative to the Fermi wavelength. Measurements of the resistance and thermopower of intrinsic and Sn-doped Bi wires with various wire diameters, ranging from 150-480 nm, have been carried out over a wide range of temperatures (4-300 K) and magnetic fields (0-14 T). We find that the thermopower of intrinsic Bi wires in this diameter range is positive (type-p) below about 150 K, displaying a peak at around 40 K. In comparison, intrinsic bulk Bi is type-n. Magneto-thermopower effects due to the decrease of surface scattering when the cyclotron diameter is less than the wire diameter are demonstrated. The measurements are interpreted in terms of a model of diffusive thermopower, where the mobility limitations posed by hole-boundary scattering are much less severe than those due to electron-hole scattering.Comment: 32 pages, 12 figures. Previous version replaced to improve readabilit

Reaction rates and transport in neutron stars

Understanding signals from neutron stars requires knowledge about the transport inside the star. We review the transport properties and the underlying reaction rates of dense hadronic and quark matter in the crust and the core of neutron stars and point out open problems and future directions.Comment: 74 pages; commissioned for the book "Physics and Astrophysics of Neutron Stars", NewCompStar COST Action MP1304; version 3: minor changes, references updated, overview graphic added in the introduction, improvements in Sec IV.A.