Modeling of MOS Transistors Based on Genetic Algorithm and Simulated Annealing

Abstract — A novel method to extract the efficient model for Metal-Oxide-Semiconductor (MOS) transistors in order to satisfy a specific accuracy is presented. The approach presented here utilizes a Genetic Algorithm (GA) to choose the necessary physical and heuristic elements in order to define a compact yet accurate model for MOS I-V characteristic. Then the values of the free parameters related to each element are determined using Simulated Annealing (SA). For a desired accuracy considered here, the accuracy of the results predicted by our model were within 3.1%, for PMOS, and 1.3%, for NMOS, of the results of BSIM3 model while having much less complexity compared to the BSIM3 model. When this model with a variable accuracy is implemented in a circuit simulator, it provides the freedom of making a selection between the time and the accuracy of the simulation. I