2,380 research outputs found
Ab Initio studies of the atomic structure and electronic density of states of pure and hydrogenated a-Si
We propose a method to simulate a-Si and a-Si:H using an ab initio approach
based on the Harris functional and thermally amorphisized periodically
continued cells with at least 64 atoms, and calculate their radial distribution
functions. Hydrogen incorporation was achieved via diffusive random addition.
The electronic density of states (DOS) is obtained using density functional
theory with the aid of both the Harris-functional and Kohn-Sham-LDA approaches.
Two time steps are used, 2.44 and 10 fs for the pure, and 0.46 and 2 fs for the
hydrogenated, to see their effect on the topological and DOS structure of the
samples. The calculated long time-step radial features of a-Si are in very good
agreement with experiment whereas for a-Si:H the short time-step partial and
total radial features agree well; for the long time-step simulation molecular
hydrogen appears during annealing.The long time-step a-Si has a well defined
gap with two dangling bonds, that clears and increases upon hydrogen addition
and relaxation, as expected. The short time-step structures have more defects,
both dangling and floating bonds, that are less characteristic of a good
sample; however the radial structures of a-Si:H are in better agreement with
experiment indicating that the experimental work was done on defective samples.Comment: 11 pages, RevTeX, 16 figures, submitted to Phys. Rev. B 16 June 200
Boron Nitride Thin-Film Deposited by RF Magnetron Sputtering
Cubic Boron Nitride is considered a superhard material, its thermochemical stability makes it suitable for applications with corrosive environments and high temperatures. C-BN is grown by PDV on Si substrates. The plasma is energized via an RF source to sputter the target. The ion species in the plasma can be described by the classic electrodynamic expression . Plasma temperature is given by T = (6.2836*E/8*k). The sputter is given by the ratio of the heat transfer to the enthalpy of formation , of the target. The Hall Measurement is performed as recommended by NIST. The measurement was performed on a c-BN thin film deposited on a Si substrate. The deposition was done at 6mT, 600 °C, 6Ar/9N2, for 18 Hr. The voltage polarity measurement indicates that holes are the majority charge carrier and verifies the p-type conductivity of the sample, this is an important parameter in semiconductor devices
Superconductivity as a Bose-Einstein condensation?
Bose-Einstein condensation (BEC) in two dimensions (2D) (e.g., to describe
the quasi-2D cuprates) is suggested as the possible mechanism widely believed
to underlie superconductivity in general. A crucial role is played by nonzero
center-of-mass momentum Cooper pairs (CPs) usually neglected in BCS theory.
Also vital is the unique {\it linear} dispersion relation appropriate to
weakly-coupled "bosonic" CPs moving in the Fermi sea--rather than in vacuum
where the dispersion would be quadratic but only for very strong coupling, and
for which BEC is known to be impossible in 2D.Comment: 6 pages included 3 figure
Harmonically Trapped Quantum Gases
We solve the problem of a Bose or Fermi gas in -dimensions trapped by mutually perpendicular harmonic oscillator potentials. From the
grand potential we derive their thermodynamic functions (internal energy,
specific heat, etc.) as well as a generalized density of states. The Bose gas
exhibits Bose-Einstein condensation at a nonzero critical temperature
if and only if , and a jump in the specific heat at if and
only if . Specific heats for both gas types precisely coincide as
functions of temperature when . The trapped system behaves like an
ideal free quantum gas in dimensions. For we recover
all known thermodynamic properties of ideal quantum gases in dimensions,
while in 3D for 1, 2 and 3 one simulates behavior reminiscent of
quantum {\it wells, wires}and{\it dots}, respectively.Comment: 14 pages including 3 figures and 3 table
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