Electronic structure basis for the titanic magnetoresistance in WTe2_2

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified

Gapped Surface States in a Strong-Topological-Semimetal

A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and \textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $\bar{\Gamma}\bar{K}$ closes to zero toward the mirror-invariant $\bar{\Gamma}\bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.Comment: 5 pages, 3 figure

Tunneling in graphene-topological insulator hybrid devices

Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi$_2$Se$_3$ density of states. Similar results were obtained for BLG on top of Bi$_2$Se$_3$, with 10-fold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi$_2$Se$_3$ and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI $\Gamma$ and graphene $K, K'$ points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge-neutrality point is traced along the energy-density trajectory. This trajectory is used as a measure of the ground-state density of states

Quasiparticle Liquid in the Highly Overdoped Bi2212

We present results from the study of a highly overdoped (OD) Bi2212 with a $T_{c}=51$K using high resolution angle-resolved photoemission spectroscopy. The temperature dependent spectra near the ($\pi,0$) point show the presence of the sharp peak well above $T_{c}$. From the nodal direction, we make comparison of the self-energy with the optimally doped and underdoped cuprates, and the Mo(110) surface state. We show that this OD cuprate appears to have properties that approach that of the Mo. Further analysis shows that the OD has a more $k$-independent lineshape at the Fermi surface than the lower-doped cuprates. This allows for a realistic comparison of the nodal lifetime values to the experimental resistivity measurements via Boltzmann transport formulation. All these observations point to the validity of the quasiparticle picture for the OD even in the normal state within a certain energy and momentum range.Comment: 4 pages, 4 figure