Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime

We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in the electrochemical potential of the aligned dot.Comment: 6 pages, 5 figures, submitted to Phys. Rev.

The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.Comment: 5 pages, 4 figure

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.Comment: 3.3 pages, 3 figures. Added two new subfigures, new references, and improved the tex

A Tuneable Few Electron Triple Quantum Dot

In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by novel charge transfer behaviour.Comment: 11 pages, 4 figure

Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors

We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. These results indicate new functionalities that may be utilized in nano-spintronic devices in which the spin state is electro-statically controlled via the electron occupation number.Comment: 8 pages, 4 figure

The visibility study of S-T+_+ Landau-Zener-St\"uckelberg oscillations without applied initialization

Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-St\"uckelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.Comment: 8 pages, 5 figure

Microwave absorption/reflection and magneto-transport experiments on high-mobility electron gas

We have performed simultaneous measurements of microwave absorption/reflection and magneto-transport characteristics of a high mobility two-dimensional electrons in GaAs/AlGaAs heterostructure in regime of Microwave-Induced Resistance Oscillations (MIROs). It is shown that the electrodynamic aspect of the problem is important in these experiments. In the absorption experiments a broad cyclotron resonance line was observed due to a large reflection from the highly conductive electron gas. There were no additional features observed related to absorption at harmonics of the cyclotron resonance. In near-field reflection experiments a very different oscillation pattern was revealed when compared to MIROs. The oscillation pattern observed in the reflection experiments is probably due to plasma effects occurring in a finite-size sample. The whole microscopic picture of MIROs is more complicated than simply a resonant absorption at harmonics of the cyclotron resonance. Nevertheless, the experimental observations are in good agreement with the model by Ryzhii et al. involving the photo-assisted scattering in the presence of a crossed magnetic field and dc bias. The observed damping factor of MIROs may be attributed to a change in the electron mobility as a function of temperature.Comment: to be published in IEEE Transactions On Nanotechnolog