Diameter scaling of the optical band gap in individual CdSe nanowires

The diameter dependence of the optical band gap of single CdSe nanowires (NWs) is investigated by a combination of atomic force microscopy, scanning fluorescence microscopy, and transmission electron microscopy. We find a good congruence of the experimental data to calculations within the effective mass approximation taking into account quantization, exciton Coulomb interaction, and dielectric mismatch. The experimental data are furthermore compared to different theoretical approaches. We discuss the influence of alternating wurtzite and zinc blende segments along the NWs on their optical properties

Solution-Grown Nanowire Devices for Sensitive and Fast Photodetection

Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly onto interdigitating platinum electrodes serve as catalysts in the following solution-liquid-solid synthesis of quantum nanowires directly on immersed substrates under mild conditions at low temperature. This fast and simple preparation process leads to a photodetector device with a film of nanowires of limited thickness bridging the electrode gaps, in which a high fraction of individual nanowires are electrically contacted and can be exposed to light at the same time. The high sensitivity of the photodetector device can be expressed by its on/off-ratio or its photosensitivity of more than 107 over a broad wavelength range up to about 700 nm. The specific detectivity and responsivity are determined to D* = 4*10^13 Jones and R = 0.32 A/W, respectively. The speed of the device reflects itself in a 3 dB frequency above 1 MHz corresponding to rise and fall times below 350 ns. The remarkable combination of a high sensitivity and a fast response is attributed to depletion regions inside the nanowires, tunnel-junction barriers between nanowires, as well as Schottky contacts at the electrodes, where all these features are strongly influenced by the number of photo generated charge carriers