10 research outputs found

    196 Beams in a Scanning Electron Microscope

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    In this thesis, for the first time ever, it is demonstrated that 196 beams out of a single electron source can be finely focused onto the sample using the electron optics of a standard single beam SEM. During this PhD thesis, a multi beam scanning electron (MBSEM) was designed and built. The thesis starts with a explanation of the driving force in developing such a system. Three chapters are devoted on the design and actually building of such a system and the last two chapters present the experimental results carried out to test the performance of the machine.Imaging Science & TechnologyApplied Science

    Multibeam scanning electron microscope: Experimental results

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    The authors present the first results obtained with their multibeam scanning electron microscope. For the first time, they were able to image 196 (array of 14×14) focused beams of a multielectron beam source on a specimen using single beam scanning electron microscope (SEM) optics. The system consists of an FEI Novanano 200 SEM optics column equipped with a multielectron beam source module. The source module consists of the multibeam source and an accelerator lens. In the multibeam source, the wide angle beam of a high brightness Schottky source is divided into 196 beamlets and focused by an aperture lens array. The accelerator lens is positioned on the image plane of the multibeam source to direct the beams toward the SEM column. The array of source images is further imaged by the SEM magnetic lenses, and the beam opening angle is defined at the variable aperture of the SEM. The system is designed to deliver 14×14 arrays of beamlets with a minimum probe size of 1 nm. In this article, the performance of the system is examined for a fixed magnification case.IST/Imaging Science and TechnologyApplied Science

    In multi electron beam systems, “Neighbours Matter”

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    In the Multi beam source (MBS) of our Multi Beam Scanning Electron Microscope (MBSEM), an aperture lens array (ALA) splits the emission cone of the Schottky field emitter into multiple beamlets. When the apertures in the ALA are close to each other, the ALA can introduce aberrations to these beamlets through the electrostatic interaction of neighbouring apertures with each aperture's lens field. When the apertures are arranged in a square grid pattern, the aberration causes fourfold astigmatism. The effect on the beam spot is analyzed through a combination of 3D simulations and experimental validation. To counterbalance the fourfold astigmatism, a correction scheme is proposed in which a slightly non-round profile is applied to the aperture lenses.</p

    Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

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    Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe3 as a precursor gas, 14?×?14 arrays of Pt-containing dots were deposited on a W/Si3N4/W membrane, with each array of 196 dots deposited in a single exposure. The authors demonstrate that by shifting the array of beams over distances of several times the beam pitch, one can deposit rows of closely spaced dots that, although originating from different beams within the array, are positioned within 5?nm of a straight line.IST/Imaging Science and TechnologyApplied Science

    Multiple criteria optimization of electrostatic electron lenses using multiobjective genetic algorithms

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    The design of an electrostatic electron optical system with five electrodes and two objective functions is optimized using multiobjective genetic algorithms (MOGAs) optimization. The two objective functions considered are minimum probe size of the primary electron beam in a fixed image plane and maximum secondary electron detection efficiency at an in-lens detector plane. The time-consuming step is the calculation of the system potential. There are two methods to do this. The first is using COMSOL (finite element method) and the second is using the second-order electrode method (SOEM). The former makes the optimization process very slow but accurate, and the latter makes it fast but less accurate. A fully automated optimization strategy is presented, where a SOEM-based MOGA provides input systems for a COMSOL-based MOGA. This boosts the optimization process and reduces the optimization times by at least ∼10 times, from several days to a few hours. A typical optimized system has a probe size of 11.9 nm and a secondary electron detection efficiency of 80%. This new method can be implemented in electrostatic lens design with one or more objective functions and multiple free variables as a very efficient, fully automated optimization technique. ImPhys/Microscopy Instrumentation & TechniquesDC systems, Energy conversion & Storag

    Multi-electrode lens optimization using genetic algorithms

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    In electrostatic charged particle lens design, optimization of a multi-electrode lens with many free optimization parameters is still quite a challenge. A fully automated optimization routine is not yet available, mainly because the lens potential calculations are often done with very time-consuming methods that require meshing of the lens space. A new method is proposed that improves on the low speed of the potential calculation while keeping the high accuracy of the mesh-based calculation methods. This is done by first using a fast potential calculation based on the so-called Second-Order Electrode Method (SOEM), at the cost of losing some accuracy, and then using a Genetic Algorithm (GA) for the optimization. Then, by using the parameters of the approximate systems found from this optimization based on SOEM, an accurate GA optimization routine is performed based on potential calculation with the commercial finite element package COMSOL. A six-electrode electrostatic lens was optimized accurately within a few hours, using all lens dimensions and electrode voltages as free parameters and the focus position and maximum allowable electric fields between electrodes as constraints.ImPhys/Imaging PhysicsImPhys/Charged Particle OpticsDC systems, Energy conversion & Storag

    Direct-wire atomic layer deposition of high-quality Pt nanostructures : selective growth conditions and seed layer requirements

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    Electron beam-induced deposition (EBID) enables the direct-write patterning of metallic structures with sub-10 nm lateral resolution without the use of resist films or etching/lift-off steps but generally leads to material of poor quality and suffers from a low throughput. These shortcomings were mitigated in recent work by combining EBID with atomic layer deposition (ALD). This direct-write ALD technique comprises the patterning of a thin seed layer by EBID followed by selective thickening of the pattern by ALD. In this work, the throughput of direct-write ALD was drastically improved based on new insights into how the ALD growth initiates on EBID material, and in addition, the conditions for selective ALD growth were identified. The required electron dose was reduced by 2 orders of magnitude to 11 pC/µm2 by exposing the EBID seed layers to O2 in the ALD reactor just before the ALD building step. This improvement of the technique allows for nanopatterning with a throughput comparable to electron beam lithography (EBL)
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