Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.Comment: 4 pages, 5 eps figure

The Ultraluminous X-ray Sources near the Center of M82

We report the identification of a recurrent ultraluminous X-ray source (ULX), a highly absorbed X-ray source (possibly a background AGN), and a young supernova remnant near the center of the starburst galaxy M82. From a series of Chandra observations taken from 1999 to 2005, we found that the transient ULX first appeared in 1999 October. The source turned off in 2000 January, but later reappeared and has been active since then. The X-ray luminosity of this source varies from below the detection level (~2.5e38 erg/s) to its active state in between ~7e39 erg/s and 1.3e40 erg/s (in the 0.5-10 keV energy band) and shows unusual spectral changes. The X-ray spectra of some Chandra observations are best fitted with an absorbed power-law model with photon index ranging from 1.3 to 1.7. These spectra are similar to those of Galactic black hole binary candidates seen in the low/hard state except that a very hard spectrum was seen in one of the observations. By comparing with near infrared images taken with the Hubble Space Telescope, the ULX is found to be located within a young star cluster. Radio imaging indicates that it is associated with a H II region. We suggest that the ULX is likely to be a > 100 solar mass intermediate-mass black hole in the low/hard state. In addition to the transient ULX, we also found a highly absorbed hard X-ray source which is likely to be an AGN and an ultraluminous X-ray emitting young supernova remnant which may be related to a 100-year old gamma-ray burst event, within 2 arcsec of the transient ULX.Comment: 9 pages, 8 figures. Accepted for publication in Ap

Multilevel blocking approach to the fermion sign problem in path-integral Monte Carlo simulations

A general algorithm toward the solution of the fermion sign problem in finite-temperature quantum Monte Carlo simulations has been formulated for discretized fermion path integrals with nearest-neighbor interactions in the Trotter direction. This multilevel approach systematically implements a simple blocking strategy in a recursive manner to synthesize the sign cancellations among different fermionic paths throughout the whole configuration space. The practical usefulness of the method is demonstrated for interacting electrons in a quantum dot.Comment: 4 pages RevTeX, incl. two figure

High Resolution X-Ray Imaging of the Center of IC342

We presented the result of a high resolution (FWHM~0.5'') 12 ks Chandra HRC-I observation of the starburst galaxy IC342 taken on 2 April 2006. We identified 23 X-ray sources within the central 30' x 30' region of IC342. Our HRC-I observation resolved the historical Ultraluminous X-ray sources (ULX), X3, near the nucleus into 2 sources, namely C12 and C13, for the first time. The brighter source C12, with L(0.08-10keV)=(6.66\pm0.45)\times10^{38}ergs^-1, was spatially extended (~82 pc x 127 pc). From the astrometric registration of the X-ray image, C12 was at R.A.=03h:46m:48.43s, decl.=+68d05m47.45s, and was closer to the nucleus than C13. Thus we concluded that source was not an ULX and must instead be associated with the nucleus. The fainter source C13, with L(0.08-10keV)=(5.1\pm1.4) x 10^{37}ergs^-1 was consistent with a point source and located $6.51'' at P.A. 240 degree of C12. We also analyzed astrometrically corrected optical Hubble Space Telescope and radio Very Large Array images, a comparison with the X-ray image showed similarities in their morphologies. Regions of star formation within the central region of IC342 were clearly visible in HST H alpha image and this was the region where 3 optical star clusters and correspondingly our detected X-ray source C12 were observed. We found that a predicted X-ray emission from starburst was very close to the observed X-ray luminosity of C12, suggesting that nuclear X-ray emission in IC342 was dominated by starburst. Furthermore, we discussed the possibility of AGN in the nucleus of IC342. Although our data was not enough to give a firm existence of an AGN, it could not be discarded.Comment: 29 page, 8 figures, accepted by Ap

Slow-light optical bullets in arrays of nonlinear Bragg-grating waveguides

We demonstrate how to control independently both spatial and temporal dynamics of slow light. We reveal that specially designed nonlinear waveguide arrays with phase-shifted Bragg gratings demonstrate the frequency-independent spatial diffraction near the edge of the photonic bandgap, where the group velocity of light can be strongly reduced. We show in numerical simulations that such structures allow a great flexibility in designing and controlling dispersion characteristics, and open a way for efficient spatiotemporal self-trapping and the formation of slow-light optical bullets.Comment: 4 pages, 4 figures; available from http://link.aps.org/abstract/PRL/v97/e23390

Electric Field Effects on Graphene Materials

Understanding the effect of electric fields on the physical and chemical properties of two-dimensional (2D) nanostructures is instrumental in the design of novel electronic and optoelectronic devices. Several of those properties are characterized in terms of the dielectric constant which play an important role on capacitance, conductivity, screening, dielectric losses and refractive index. Here we review our recent theoretical studies using density functional calculations including van der Waals interactions on two types of layered materials of similar two-dimensional molecular geometry but remarkably different electronic structures, that is, graphene and molybdenum disulphide (MoS$_2$). We focus on such two-dimensional crystals because of they complementary physical and chemical properties, and the appealing interest to incorporate them in the next generation of electronic and optoelectronic devices. We predict that the effective dielectric constant ($\varepsilon$) of few-layer graphene and MoS$_2$ is tunable by external electric fields ($E_{\rm ext}$). We show that at low fields ($E_{\rm ext}^{}<0.01$ V/\AA) $\varepsilon$ assumes a nearly constant value $\sim$4 for both materials, but increases at higher fields to values that depend on the layer thickness. The thicker the structure the stronger is the modulation of $\varepsilon$ with the electric field. Increasing of the external field perpendicular to the layer surface above a critical value can drive the systems to an unstable state where the layers are weakly coupled and can be easily separated. The observed dependence of $\varepsilon$ on the external field is due to charge polarization driven by the bias, which show several similar characteristics despite of the layer considered.Comment: Invited book chapter on Exotic Properties of Carbon Nanomatter: Advances in Physics and Chemistry, Springer Series on Carbon Materials. Editors: Mihai V. Putz and Ottorino Ori (11 pages, 4 figures, 30 references

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured an electrical bandgap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V/nm, respectively. This demonstration reveals the great potential of bi-layer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.Comment: 3 Figure

Thermodynamic phase diagram and phase competition in BaFe2(As1-xPx)2 studied by thermal expansion

High-resolution thermal-expansion and specific-heat measurements were performed on single crystalline BaFe2(As1-xPx)2 (0 < x < 0.33, x = 1). The observation of clear anomalies allows to establish the thermodynamic phase diagram which features a small coexistence region of SDW and superconductivity with a steep rise of Tc on the underdoped side. Samples that undergo the tetragonal-orthorhombic structural transition are detwinned in situ, and the response of the sample length to the magneto-structural and superconducting transitions is studied for all three crystallographic directions. It is shown that a reduction of the magnetic order by superconductivity is reflected in all lattice parameters. On the overdoped side, superconductivity affects the lattice parameters in much the same way as the SDW on the underdoped side, suggesting an intimate relation between the two types of order. Moreover, the uniaxial pressure derivatives of Tc are calculated using the Ehrenfest relation and are found to be large and anisotropic. A correspondence between substitution and uniaxial pressure is established, i.e., uniaxial pressure along the b-axis (c-axis) corresponds to a decrease (increase) of the P content. By studying the electronic contribution to the thermal expansion we find evidence for a maximum of the electronic density of states at optimal doping

Quintessential Phenomena in Higher Dimensional Space Time

The higher dimensional cosmology provides a natural setting to treat, at a classical level, the cosmological effects of vacuum energy. Here we discuss two situations where starting with an ordinary matter field without any equation of state we end up with a Chaplygin type of gas apparently as a consequence of extra dimensions. In the second case we study the quintessential phenomena in higher dimensional spacetime with the help of a Chaplygin type of matter field. The first case suffers from the disqualification that no dimensional reduction occurs, which is, however, rectified in the second case. Both the models show the sought after feature of occurrence of \emph{flip} in the rate of expansion. It is observed that with the increase of dimensions the occurrence of \emph{flip} is delayed for both the models, more in line with current observational demands. Interestingly we see that depending on some initial conditions our model admits QCDM, $\Lambda$CDM and also Phantom like evolution within a unified framework. Our solutions are general in nature in the sense that when the extra dimensions are switched off the known 4D model is recovered.Comment: 17 Pages, 7 figure