Nanoscale characterization of an all-oxide core-shell nanorod heterojunction using intermodulation atomic force microscopy (AFM) methods

The electrical properties of an all-oxide core-shell ZnO-Co3O4nanorod heterojunction were studied in the dark and under UV-vis illumination. The contact potential difference and current distribution maps were obtained utilizing new methods in dynamic multifrequency atomic force microscopy (AFM) such as electrostatic and conductive intermodulation AFM. Light irradiation modified the electrical properties of the nanorod heterojunction. The new techniques are able to follow the instantaneous local variation of the photocurrent, giving a two-dimensional (2D) map of the current-voltage curves and correlating the electrical and morphological features of the heterostructured core-shell nanorods

Functional modelling of complex multi‑disciplinary systems using the enhanced sequence diagram

YesThis paper introduces an Enhanced Sequence Diagram (ESD) as the basis for a structured framework for the functional analysis of complex multidisciplinary systems. The ESD extends the conventional sequence diagrams (SD) by introducing a rigorous functional flow-based modelling schemata to provide an enhanced basis for model-based functional requirements and architecture analysis in the early systems design stages. The proposed ESD heuristics include the representation of transactional and transformative functions required to deliver the use case sequence, and fork and join nodes to facilitate analysis of combining and bifurcating operations on flows. A case study of a personal mobility device is used to illustrate the deployment of the ESD methodology in relation to three common product development scenarios: (i) reverse engineering, (ii) the introduction of a specific technology to an existent system; and (iii) the introduction of a new feature as user-centric innovation for an existing system, at a logical design level, without reference to any solution. The case study analysis provides further insights into the effectiveness of the ESD to support function modelling and functional requirements capture, and architecture development. The significance of this paper is that it establishes a rigorous ESD-based functional analysis methodology to guide the practitioner with its deployment, facilitating its impact to both the engineering design and systems engineering communities, as well as the design practice in the industry

Functional modelling of complex multi‑disciplinary systems using the enhanced sequence diagram

YesThis paper introduces an Enhanced Sequence Diagram (ESD) as the basis for a structured framework for the functional analysis of complex multidisciplinary systems. The ESD extends the conventional sequence diagrams (SD) by introducing a rigorous functional flow-based modelling schemata to provide an enhanced basis for model-based functional requirements and architecture analysis in the early systems design stages. The proposed ESD heuristics include the representation of transactional and transformative functions required to deliver the use case sequence, and fork and join nodes to facilitate analysis of combining and bifurcating operations on flows. A case study of a personal mobility device is used to illustrate the deployment of the ESD methodology in relation to three common product development scenarios: (i) reverse engineering, (ii) the introduction of a specific technology to an existent system; and (iii) the introduction of a new feature as user-centric innovation for an existing system, at a logical design level, without reference to any solution. The case study analysis provides further insights into the effectiveness of the ESD to support function modelling and functional requirements capture, and architecture development. The significance of this paper is that it establishes a rigorous ESD-based functional analysis methodology to guide the practitioner with its deployment, facilitating its impact to both the engineering design and systems engineering communities, as well as the design practice in the industry

Engineering of electronic and optical properties of PbS thin films via Cu doping

Copper-doped PbS polycrystalline thin films were deposited by chemical bath deposition by adding small amount of Cu (y(solution) = [Cu2+]/[Pb2+]) between 0.5 and 2 at%. The composition, structure, morphology, optical and electrical properties of the films were investigated by means of X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS), UV-visible near infrared (UV-Vis-NIR) spectrophotometry and Hall effect measurements. The XRD studies showed that the undoped films have PbS face centered cubic structure with (111) preferential orientation, while preferential orientation changes to (200) plane with increasing Cu doping concentration. The AFM and SEM measurements indicated that the film surfaces consisted of nanosized grains with pyramidal shape. Optical band gap was blue shifted from 0.72 eV to 1.69 eV with the increase in Cu doping concentration. The film obtained with the [Cu2+]/[Pb2+] ratio equal to 1.5 at% Cu showed the minimum resistivity of 0.16 Omega cm at room temperature and optimum value of optical band gap close to 1.5 eV. 1.5 at% Cu-doped PbS thin films exhibit the best optical and electrical properties, suitable for solar cells applications. (C) 2016 Elsevier Ltd. All rights reserved

ZnO-Cu2O core-shell nanowires as stable and fast response photodetectors

In this work, we present all-oxide p-n junction core-shell nanowires (NWs) as fast and stable self-powered photodetectors. Hydrothermally grown n-type ZnO NWs were conformal covered by different thicknesses (up to 420 nm) of p-type copper oxide layers through metalorganic chemical vapor deposition (MOCVD). The ZnO NWs exhibit a single crystalline Wurtzite structure, preferentially grown along the [002] direction, and energy gap Eg = 3.24 eV. Depending on the deposition temperature, the copper oxide shell exhibits either a crystalline cubic structure of pure Cu2O phase (MOCVD at 250 °C) or a cubic structure of Cu2O with the presence of CuO phase impurities (MOCVD at 300 °C), with energy gap of 2.48 eV. The electrical measurements indicate the formation of a p-n junction after the deposition of the copper oxide layer. The core-shell photodetectors present a photoresponsivity at 0 V bias voltage up to 7.7 µA/W and time response ≤ 0.09 s, the fastest ever reported for oxide photodetectors in the visible range, and among the fastest including photodetectors with response limited to the UV region. The bare ZnO NWs have slow photoresponsivity, without recovery after the end of photo-stimulation. The fast time response for the core-shell structures is due to the presence of the p-n junctions, which enables fast exciton separation and charge extraction. Additionally, the suitable electronic structure of the ZnO-Cu2O heterojunction enables self-powering of the device at 0 V bias voltage. These results represent a significant advancement in the development of low-cost, high efficiency and self-powered photodetectors, highlighting the need of fine tuning the morphology, composition and electronic properties of p-n junctions to maximize device performances