As-deposited oxide superconductor films on silicon and aluminum oxide

The present invention relates to an electron beam coevaporation method of preparing an oxide superconducting film on a silicon or an aluminum oxide substrate at a temperature below 600.degree. C. without the need for post-annealing, which comprises evaporating metallic superconductor precursor components onto a heated substrate from individual evaporation sources while directing oxygen plasma over the substrate surface wherein the evaporation sources and the substrate are located in two different vacuum chambers, a differential pressure is maintained between the two vacuum chambers during deposition so that the lowest pressure is at the evaporation sources, an intermediate pressure in the vacuum chamber surrounding the substrate and the highest pressure at the substrate surface.Board of Regents, University of Texas Syste