Fracture surface characteristics of notched angleplied graphite/epoxy composites

Composite fracture surface characteristics and related fracture modes have been investigated through extensive microscopic inspections of the fracture surfaces of notched angleplied graphite/epoxy laminates. The investigation involved 4 ply laminates of the configuration + or - theta (s) where theta = 0 deg, 3 deg, 5 deg, 10 deg, 15 deg, 30 deg, 45 deg, 60 deg, 75 deg, and 90 deg. Two-inch wide tensile specimens with 0.25 in. by 0.05 in. through-slits centered across the width were tested to fracture. The fractured surfaces were then removed and examined using a scanning electron microscope. Evaluation of the photomicrographs combined with analytical results obtained using the CODSTRAN computer code culminated in a unified set of fracture criteria for determining the mode of fracture in notched angleplied graphite/epoxy laminates

Management system requirements for wireless systems beyond 3G

This paper presents a comprehensive description of various management system requirements for systems beyond 3G, which have been identified as a result of the Software Based Systems activities within the Mobile VCE Core 2 program. Specific requirements for systems beyond 3G are discussed and potential technologies to address them proposed. The analysis has been carried out from network, service and security viewpoints

Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.Comment: 16 pages, 6 figure

Spin gating electrical current

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.Comment: 5 pages, 4 figure

Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell

We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible.Comment: 34 pages, 11 figure