Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

In this manuscript, we develop a generalized theory for the scattering process produced by interface roughness on charge carriers that is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape of Ge/Ge-Si heterointerfaces obtained by atom probe tomography, we are able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration. To show the relevance of our generalized scattering model in the physics of semiconductor devices, we implement it in a nonequilibrium Green's function simulation platform to assess the performance of a Ge/Si-Ge-based terahertz quantum cascade laser

Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors

By independently engineering strain and composition, this work demonstrates and investigates direct-band-gap emission in the midinfrared range from Ge1-xSnx layers grown on silicon. We extend the room-temperature emission wavelength above approximately 4.0 μm upon postgrowth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always observed in the probed temperature range of 4-300 K, ruling out defect- and impurity-related emission. Moreover, carrier losses into thermally activated nonradiative recombination channels are found to be greatly minimized as a result of strain relaxation. Absorption measurements validate the direct band-gap in strained and relaxed samples at energies closely matching photoluminescence data. These results highlight the strong potential of Ge1-xSnx semiconductors as versatile building blocks for scalable, compact, and silicon-compatible midinfrared photonics and quantum optoelectronics

Micrometer-thick, atomically random SiGeSn for silicon-integrated infrared optoelectronics

A true monolithic infrared photonics platform is within the reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. However, this Si-compatible family of group-IV semiconductors is typically strained and inherently metastable, making the epitaxial growth fraught with extended defects and compositional gradients. Herein, we control the growth kinetics to achieve epitaxial Si0.06Ge0.90Sn0.04 layers lattice-matched to a Ge on Si substrate, with a uniform content and a thickness up to 1.5 {\mu}m. Atomic-level studies demonstrate high crystalline quality and uniform composition and confirm the absence of short-range ordering and clusters. Room temperature spectroscopic ellipsometry and transmission measurements show direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices exhibit a dark current similar to that of Ge devices and a slightly higher room-temperature spectral responsivity reaching 1 A/W above 0.82 eV (i.e. below 1.5 {\mu}m wavelengths). These results underline the enhanced performance in lattice-matched devices and pave the way to introduce SiGeSn semiconductors as building blocks to implement the long-sought-after silicon-integrated infrared optoelectronics

Probing the infrared properties of a p-doped Ge0.938_{0.938}Sn0.062_{0.062} thin film via polarization-dependent FTIR spectroscopy

ABSTRACT: The complex relative permittivity of doped Ge₁₋ₓSnₓ thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based upon polarization-dependent reflection measurements along with multi-layer Fresnel reflection equations. The developed approach is implemented to acquire the complex relative permittivity of a 170-nm-thick Ge₁₋ₓSnₓ film exhibiting a hole carrier concentration of 3.3 × 10¹⁹ cm⁻³ and x = 6.2%, with this Sn composition suggesting the film is on the cusp of exhibiting a direct bandgap. The investigation conducted on this thin film as well as the developed methodology are expected to further establish Ge₁₋ₓSnₓ as the primary semiconductor for on-chip light emission and sensing devices

Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration