Electrical and Optical Characterisation of 100 MeV 197Au Irradiated GaAs

Effect of 100 MeV 197Au implantation, followedby Rapid Thermal Annealing on electrical and opticalcharacteristic is reported. Single crystal n+ GaAssubstrates of orientation have been implanted atroom temperature with 197Au ions to the doses of 1X1012,1X1013, 1X1014 ions/cm2. The as-implanted current-voltage(I-V) characteristic of samples is studied and the opticalinvestigations in IR and mid IR-range have been made.The implanted samples were isochronally annealed byRTA system at different temperatures and the roomtemperature electrical characterization and the opticalinvestigations are reported

Electrical and Optical Characterisation of 100 MeV 197Au Irradiated GaAs.

Effect of 100 MeV 197Au implantation, followed by Rapid Thermal Annealing on electrical and optical characteristic is reported. Single crystal n+ GaAs substrates of orientation have been implanted at room temperature with 197Au ions to the doses of 1X1012, 1X1013, 1X1014 ions/cm2. The as-implanted current-voltage (I-V) characteristic of samples is studied and the optical investigations in IR and mid IR-range have been made. The implanted samples were isochronally annealed by RTA system at different temperatures and the room temperature electrical characterization and the optical investigations are reported