수소 원자 충돌에 의한 금속 표면의 전자 여기

학위논문(석사)--서울대학교 대학원 :응용화학부,2004.Maste

Bubbling ractor를 이용한 탈황흡수공정에 관한 연구

학위논문(석사)--서울대학교 대학원 :화학공학과,1998.Maste

Enhanced Electrical and Optical Properties of IWO Thin Films by Post-deposition Electron Beam Irradiation

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In2O3 (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10-3 Ω-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10-3 Ω-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films

Influence of Substrate Bias Voltage on the Electrical and Optical Properties of IWO Thin Films

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2 /Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions

Effects of Electron Irradiation on the Optoelectrical Performance of ZnO/Ag/ZnO Films

Transparent ZnO/Ag/ZnO tri-layered films were deposited on a glass substrate using radio frequency and direct current magnetron sputtering. The thicknesses of the ZnO and Ag films were maintained at 30 and 10 nm, respectively, to consider the effects of electron irradiation on the optoelectrical properties of the films. XRD spectra revealed that post-deposition electron irradiated films exhibited characteristic peaks of ZnO (002) and Ag (111), respectively. The observed grain sizes of ZnO (002) and Ag (111) increased to 7.1 and 8.4 nm, respectively, under an irradiation condition of 900 eV, and the surface roughness of the electron irradiated films at 900 eV was reduced to 1.29 nm. The as-deposited films showed a figure of merit, indicating the optoelectrical performance of the films, of 4.1×10-3 Ω-1, whereas the films electron irradiated at 900 eV showed a higher figure of merit of 1.1×10-2 Ω-1

Influence of Ag interlayer Thickness on the Optical, Electrical and Mechanical Properties of Ti-doped In2O3/Ag/Ti-doped In2O3 Multilayer Flexible Transparent Conductive Electrode

Transparent and conductive Ti-doped In2O3 (TIO)/Ag/Ti-doped In2O3 (TAT) multilayer films were deposited on colorless poly imide (CPI) substrates by direct current (DC) and radio frequency (RF) magnetron sputtering at room temperature. During deposition the thickness of both the top and bottom TIO layer was fixed at 30 nm, while the thickness of the Ag interlayer was varied, to 5, 10, and 15 nm, to enhance the optical, electrical and mechanical properties of the films. In the XRD analysis the TIO films did not show any characteristic peaks in the diffraction pattern. The 10 nm thick Ag inter layer showed some characteristic peaks of Ag (111), (200), (220) and (311), respectively, and the grain size of the Ag interlayer enlarged as Ag thickness increased. To investigate the most efficient Ag interlayer thickness, a figure of merit (FOM) based on the opto-electrical performance of the transparent conducting films was compared. The films with a 10 nm thick Ag interlayer exhibited a higher FOM of 1.71 x 10(-2) O-1 than the other films. When the radius of the film's curvature was reduced to 1.7 mm, the TIO single layer films showed a 13 times increase in sheet resistance, while the TAT (30/10/30 nm) films showed an insignificant change in sheet resistance. From the observed results, it was concluded that the Ag interlayer in the TAT multilayer films enhanced the opto-electrical performance of the films and also acted as a potent bridge which assured the high flexibility endurance of the films

Effect of Electron Irradiation on the Optical and Electrical Properties of TIO/Ag/TIO Films

The influence of electron irradiation energy on the optical and electrical properties of TIO/Ag/TIO films has been investigated. These films prepared with RF and DC magnetron sputtering; they show the lowest resistivity of 4.71 × 10?? Ωcm. The visible transmittance also increased with the electron irradiation energy. The film irradiated at 700 eV shows 83.71% of visible transmittance. In addition, the electron irradiated films at 700 eV show a lower RMS roughness of 63.54 nm. Comparing the figure of merit, we conclude that the visible transmittance and electrical resistivity of the films are dependent on the electron irradiation energy; moreover, the opto-electrical performance of the film is enhanced by electron irradiation

Effect of Ag interlayer on the optical and electrical properties of ZnO thin films

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×1021 cm-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10-3 Ω-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films