통계적 방법에 의한 애니밈 기반 립싱크 애니메이션

Thesis(doctors) --서울대학교 대학원 :전기. 컴퓨터공학부, 2009.2.Docto

Caricature Drawing System by Understanding User Facial Attributes

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Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ferroelectric materials have been intensively investigated for high-performance nonvolatile memory devices in past decades owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than conventional memory devices. However, non-complementary metal-oxide-semiconductor (CMOS) compatibility and degradation due to fatigue of traditional perovskite-based ferroelectric materials have hindered the development of high-density and high-performance ferroelectric memories in the past. The recently developed hafnia-based ferroelectric materials have attracted immense attention in the development of advanced semiconductor devices. Because hafnia is typically used in CMOS processes, it can be directly incorporated into the current semiconductor technologies. Additionally, hafnia-based ferroelectrics show high scalability and large coercive fields that are advantageous for high-density memory devices. This review summarizes the recent developments in ferroelectric devices, especially ferroelectric transistors, for next-generation memory and neuromorphic applications. First, the types of ferroelectric memories and their operation mechanisms are reviewed. Then, issues limiting the realization of high-performance ferroelectric transistors and possible solutions are discussed. The experimental demonstration of ferroelectric transistor arrays, including three-dimensional ferroelectric NAND and its operation characteristics, are also reviewed. Finally, challenges and strategies toward the development of next-generation memory and neuromorphic applications based on ferroelectric transistors are outlined.11Nsciescopu

대용량 페이지를 고려한 분리 메모리 시스템 관리 기법

학위논문(석사) - 한국과학기술원 : 전산학부, 2023.8,[iv, 27 p. :]Nowadays, emerging technologies such as big data analysis and machine learning impose a significant burden on memory costs. To address these problems, the concept of a disaggregated memory system is gaining traction as a means to efficiently utilize memory resources. Page migration becomes necessary to achieve high memory utilization in a disaggregated memory system. Furthermore, employing huge pages can enhance the overall performance of applications on a disaggregated memory system by reducing address translation costs. However, the use of huge pages can also result in increased memory internal fragmentation, leading to wasted local memory. To mitigate this issue, we propose a novel page migration technique that incorporates effective huge page promotion. Our scheme demonstrates a 2.3% performance improvement compared to a scenario where all memory resides in local memory, despite our scheme utilizing only 30% of local memory. Additionally, our approach effectively leverages huge pages, reducing TLB misses by 75% compared to a scheme that only employs regular page sizes.한국과학기술원 :전산학부

CMOS-compatible 3D Ferroelectric NAND Flash Memory for Advanced Memory Applications

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Artificial Synapse Devices Using the Liquid for Low Power Consumption

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Organic Ion Reservoirs for Synaptic Memory Devices

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Ferroelectric Analog Synaptic Transistors for Neuromorphic Applications

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