Acetylcholinesterase Immobilization on ZIF-8/Graphene Composite Engenders High Sensitivity Electrochemical Sensing for Organophosphorus Pesticides

A sensitive and flexible detection method for organophosphorus pesticides (OPs) detection is a crucial request to avoid their further expanded pollution. Herein, an acetylcholinesterase (AChE) electrochemical sensor, based on the co-modification of ZIF-8 and graphene (GR), was constructed for the detection of OPs. ZIF-8/GR composite can provide a stable and biocompatible environment for the loading of AChE and can accelerate the chemical reaction on the electrode surface. After optimization, the linear detection range of the constructed AChE-CS/GR/ZIF-8/GCE sensor for ICP was 0.5–100 ng/mL (1.73–345.7 nM), and the limit of detection was 0.18 ng/mL (0.62 nM). Moreover, high sensitivity and high specificity of the sensor were also achieved in actual cabbage and tap water samples. Therefore, it has great potential for the application of organophosphorus pesticide residue analysis

Acetylcholinesterase Immobilization on ZIF-8/Graphene Composite Engenders High Sensitivity Electrochemical Sensing for Organophosphorus Pesticides

A sensitive and flexible detection method for organophosphorus pesticides (OPs) detection is a crucial request to avoid their further expanded pollution. Herein, an acetylcholinesterase (AChE) electrochemical sensor, based on the co-modification of ZIF-8 and graphene (GR), was constructed for the detection of OPs. ZIF-8/GR composite can provide a stable and biocompatible environment for the loading of AChE and can accelerate the chemical reaction on the electrode surface. After optimization, the linear detection range of the constructed AChE-CS/GR/ZIF-8/GCE sensor for ICP was 0.5–100 ng/mL (1.73–345.7 nM), and the limit of detection was 0.18 ng/mL (0.62 nM). Moreover, high sensitivity and high specificity of the sensor were also achieved in actual cabbage and tap water samples. Therefore, it has great potential for the application of organophosphorus pesticide residue analysis

Simulation of Light-Trapping Characteristics of Self-Assembled Nano-Ridges in Ternary Organic Film

The presence of self-assembled nano-ridged (SANR) structures in PTB7-Th:PC70BM:PC60BM ternary organic blend film with the specific component ratio was experimentally clarified, and the light-trapping effect of the SANR structures was demonstrated. On this basis, the light-trapping characteristics of the PTB7-Th:PC70BM:PC60BM ternary blend film with the SANR structures were investigated by using the finite-difference time-domain (FDTD) algorithm. The results showed that the SANR structures have a light-trapping effect, which can effectively reduce the transmittance and reflectance of the incident photons at the specific wavelengths and thus exhibit stronger photon absorption, especially for the photons in the wavelength range of 550–650 nm. The light-trapping effect of the SANR structures does not depend on the direction of photon incidence, and the active layer traps the photons incident from both its top and bottom. The dimensional variation of the SANR has a significant effect on the light-trapping characteristics of the active layer, and the effect caused by the height variation is overwhelmingly superior compared with that of the width variation. In addition, the higher the density of the SANR, the more significant the light-trapping effect of the active layer. This work provides a theoretical basis for the further experimental enhancement of the photon absorption capacity of the PTB7-Th:PC70BM:PC60BM active layer with SANR structures

Ultrahigh conductivity in Weyl semimetal NbAs nanobelts

In two-dimensional (2D) systems, high mobility is typically achieved in low-carrier-density semiconductors and semimetals. Here, we discover that the nanobelts of Weyl semimetal NbAs maintain a high mobility even in the presence of a high sheet carrier density. We develop a growth scheme to synthesize single crystalline NbAs nanobelts with tunable Fermi levels. Owing to a large surface-to-bulk ratio, we argue that a 2D surface state gives rise to the high sheet carrier density, even though the bulk Fermi level is located near the Weyl nodes. A surface sheet conductance up to 5-100 S per □ is realized, exceeding that of conventional 2D electron gases, quasi-2D metal films, and topological insulator surface states. Corroborated by theory, we attribute the origin of the ultrahigh conductance to the disorder-tolerant Fermi arcs. The evidenced low-dissipation property of Fermi arcs has implications for both fundamental study and potential electronic applications