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1 research outputs found
掺杂InGaAs/InAlAs单量子阱中电子对称态和反对称态磁输运研究
Author
仇志军
崔利杰
+7 more
戴宁
曾一平
桂永胜
疏小舟
禇君浩
郭少令
黄志明
Publication venue
Publication date
01/01/2004
Field of study
No full text
利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象.通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV.此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系
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