Discussion of Flexible Resource Between Ecological System and Economic System for Cropland-to-Forest Land Use Conversion

退耕还林还草中,建设生态系统与经济系统"弹性资源",对于良性生态经济系统调控机制的形成具有重要的作用。通过对其概念的界定,得出了生态系统与经济系统"弹性资源"的3个重要特征:(1)具有多种可供利用的途径,可满足不同阶段生态环境建设和商品生产发展的需求;(2)具有稳定的生态经济系统结构和良好的自我调控机制;(3)满足生态目标、经济目标和社会目标的有机统一。以县南沟示范区为例研究了其弹性资源建设标准和进展

Study of the Developing Law of Eco-economic System in Zhifanggou Valley—and Discussion of the Developing Law of Eco-economic System in Implementing the Project of Fading Cropland and Returning Forest (Grass)

生态经济系统演变过程分为4个阶段,纸坊沟流域经过20余年的综合治理初步步入第Ⅲ阶段;以纸坊沟流域为例,在分析不同阶段系统演变驱动力的基础上,研究了生态经济系统演变规律:(1)生态系统对经济系统作用的滞后性,(2)系统结构决定系统功能,但人类根据自己的需要通过对系统功能的预期,调整系统结构,(3)生态经济系统循环中的投入主体在不同阶段具有不同表现形式。探讨了“退耕还林(草)工程”下生态经济系统“凸变”演替的具体表现,即“退耕还林(草)工程”是对资源需求量的强制规定,“退耕还林(草)工程”经济补偿政策使生产经营者对资源的需求量减少,退耕还林(草)”工程使实施区域直接过度到第Ⅱ阶段后期或第Ⅲ阶段

The Evolvement Stage and Driving Force of Eco-economy System in Zhifanggou Valley

退耕还林(草)是恢复和重建生态经济系统,建立可持续发展模式的有效途径,生态经济演变过程划分为三个发展阶段:调整产业结构的初期,土地的合理调整是突破口;稳定发展时期,提高工副业收入、增加单产是其主要驱动力;加速发展时期,以合理安排从土地上解放的劳动力,增加工副业收入为主要发展途径。草地收入水平太低是建立生态经济系统良性循环的制约因素

AlN thin film grown on different substrates by hydride vapor phase epitaxy

AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000 degrees C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220,187 and 260 arc s, respectively. While the corresponding counterparts of (1012) are 1300, 662 and 2650 arc s, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200 nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200 nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes. (C) 2015 Elsevier B.V. All rights reserved