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- 27/12/2006
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- 30/05/2007
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- 27/12/2006
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- 19/09/2007
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- 03/10/2007
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- 05/09/2007
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- 01/01/2003
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No full text在不同弹性抛光布、不同氧化浓度、不同pH值的抛光液等条件下进行了化学机械抛光试验，并用TEM测量了晶片亚表面损伤层厚度。研究发现抛光布的弹性及抛光液的氧化和化学去除能力决定了GaAs抛光晶片的亚表面损伤层深度，并分析和讨论了其原因
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