多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过

（n11）面上生长的Ⅲ-Ⅴ族半导体的喇曼散射研究

报道不同指数面(n11)上生长的Ga_(0.5)Al_(0.5)As和In_(0.52)Al_(0.48)As系列样品的长光学声子模的室温喇曼散射测量结果。在背散射条件下不同的偏振配置下，观测到这些样品中对应的L0模和T0模的相对强度随着不同的指数面呈现出规律变化，同时把这一实验结果与(n11)指数面上生长的闪锌矿结构材料的喇曼散射选择定则的理论预计相比较实验结果与理论预期的一致

Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to similar to 120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature.&nbsp

大连极紫外相干光源

先进光源的发展在前沿科学研究中发挥的作用越来越重要。近十年来,飞速发展的自由电子激光技术为科学家们提供了探索未知世界、发现新科学规律和实现技术变革的重要工具。建成的大连极紫外(EUV)相干光源的运行波段为50~150nm,单脉冲能量大于100μJ,且可提供10-12 s和10-13 s量级的超快激光脉冲,是我国第一台自由电子激光用户装置,并且是国际上唯一运行在极紫外波段的自由电子激光用户装置,在世界范围内为用户提供具有高峰值亮度和超短脉冲的极紫外激光。大连EUV相干光源是由国家自然科学基金委资助、由中国科学院大连化学物理研究所和上海应用物理研究所共同承担的重大科学仪器研制项目,目标是打造一个以先进极紫外光源为核心、主要用于能源基础科学研究的光子科学平台