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1 research outputs found
用正电子研究原生ZnO单晶中的缺陷
Author
庞锦标
戴益群
+4 more
李辉
柯君玉
王柱
赵有文
Publication venue
Publication date
01/01/2008
Field of study
No full text
利用正电子寿命谱和多普勒展宽谱技术研究了原生ZnO的缺陷结构及其退火效应. 经900 ℃退火之后,正电子寿命实验显示样品中的空位型缺陷基本被消除,其体寿命为180 ps.通过比较原生和退火样品的符合多普勒展宽谱的商谱曲线,两者有相似的峰型,结合寿命谱的相关数据表明原生ZnO中不存在H原子填充Zn空位
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