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- Applied Mathematics and Mechanics
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No full text研究了空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量1 * 10~9 ～ 5 * 10~(13) cm~(-2)的变化。实验表明，两种太阳电池的电性能随辐照注量增加有不同的衰降趋势，背场Si太阳电池性能参数I_(sc)、V_(oc)和P_(max)衰降变化快，辐照注量为2 * 10~(10)cm~(-2)时，P_(max)就已衰降为原值的75％；而GaAs/Ge电池对应相同的衰降辐照注量达8 * 10~(11)cm~(-2), 且其I_(sc)、V_(oc)和P_(max)衰降变化起初缓慢，当辐照注量接近3 * 10~(12)~(-2)时才迅速下降。背场Si电池和GaAs/Ge电池性能衰降分别与擀子辐照引入的E_v + 0.14eV及E_v + 0.43eV和E_c - 0.41eV深能级有关
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