- Publication venue
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- 01/01/1992
- Field of study
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- Publication venue
- Publication date
- 01/01/1990
- Field of study
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- Publication venue
- Publication date
- 01/01/1992
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No full text
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- 01/01/1990
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- Publication date
- 01/01/1990
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- 01/01/1993
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No full text讨论了采了MOCVD技术生长的平面型InGaAs／InP PIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜, 提高了器件的量子效率, 达到～90％, 采用平面型结构有可能改善器件的稳定性和可靠性。图3参
- Publication venue
- Publication date
- 01/01/1996
- Field of study
No full text用P型InP衬底新月型(PBC)结构制备1.48μm大功率激光,与单模光纤耦合输出功率大于40mW
- Publication venue
- Publication date
- 01/01/1996
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- Publication date
- 01/01/1991
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