磁控溅射法制备Si_(1-x)Ge_x/B多层薄膜及其热电性能研究

本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明：B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下具有较高的Seebeck系数,最大值为6.75×10^-4 V/K,电阻率最小值为1.6×10^-5Ω·m,其功率因子最大值为0.026 W/（m·K^2）

磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究

本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明：B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下具有较高的Seebeck系数,最大值为6.75×10^-4 V/K,电阻率最小值为1.6×10^-5Ω·m,其功率因子最大值为0.026 W/（m·K^2）

Thermoelectric Property of Si1-xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering

Unique structure （SiGe/B） based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each o

Review of Nano Si？Ge Thermoelectric Materials and Devices Research

In recent years, a large number of nanotechnologies are performed to design and fabricate silicon germanium thermoelectric materials and novel devices. Band engineering and scattering mechanism theories have been taken accountto theoretical design new Si