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- 01/01/1997
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No full text采用“不间断生长/退火”技术,并配之以微量硼补偿,制备了高性能的氢化非晶硅薄膜(a-Si:H),其光敏性(σ_(ph)σ_d)达到10~6)量级,并且稳定性得以显著提高,在100mW/cm~2的白光长时间照射后没有观察到衰退现象。分析指
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- 01/07/1997
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