25 Gbit/s transmission over 500 m multimode fibre using 850 nm VCSEL with integrated mode filter

An integrated mode filter in the form of a shallow surface relief was used to reduce the spectral width of a high-speed 850 nm vertical-cavity surface-emitting laser (VCSEL). The mode filter reduced the RMS spectral width from 0.9 to 0.3 nm for a VCSEL with an oxide aperture as large as 5 mu m. Because of reduced effects of chromatic and modal fibre dispersion, the mode filter significantly increases the maximum error-free (bit error rate < 10(-12)) transmission distance, enabling transmission at 25 Gbit/s over 500 m of multimode OM3+ fibre

GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays

We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays

Sub-Millisecond Measurements of Thermal Conductivity and Thermal Diffusivity Using Micrometer-Sized Hot Strips

A new measurement technique based on the transient hot strip technique has recently been developed for studying anisotropic thermal transport properties of thin crystalline films. A micrometer-sized hot strip sensor is evaporated on the surface of the crystalline film sample, which has been deposited on a substrate wafer of limited thickness. From a pulsed transient recording, using sub-millisecond square-shaped pulses, a thermal probing depth that is less than the film thickness is assured. In the ongoing work of verifying the technique, we show results from measurements on z-cut crystal quartz and fused silica, using thermal probing depths of only 30 μm, which closely conform to bulk values found in the literature

4-PAM for high-speed short-range optical communications

In this work, we compare 4-pulse amplitude modulation and on–off keying modulation formats at high speed for short-range optical communication systems. The transmission system comprised a directly modulated verticalcavity surface-emitting laser operating at a wavelength of 850 nm, an OM3Å multimode fiber link, and a photodetector detecting the intensity at the receiver end. The modulation formats were compared both at the same bit-rate and at the same symbol rate. The maximum bit-rate used was 25 Gbps. Propagation distances up to 600 m were investigated at 12.5 Gbps. All measurements were done in real time and without any equalization

30 Gbps 4-PAM transmission over 200m of MMF using an 850 nm VCSEL

We present high speed real time, error free 4-PAMtransmission for short range optical links based on a VCSEL operating at 850 nm, a multimode fibre and a simple intensity detector. Transmission speeds of 25 Gbps and 30 Gbps are demonstrated, and the maximum fibre reaches were 300 m and 200 m, respectively. The 4-PAM is also compared with OOK transmission at 25 Gbps, and we find that at this bit rate 4-PAM increases the error free transmission distance in the multimode fibre by 100 m, compared to OOK

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 degrees C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-mu m inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them

37 Gbps transmission over 200 m of MMF using single cycle subcarrier modulation and a VCSEL with 20 GHz modulation bandwidth

We report transmission at 37.2 Gb/s over 200 m of multimode fibre using a directly modulated VCSEL operating at 850 nm, using 20 GHz modulation bandwidth

Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs

We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them

Electrochemical etching of AlGaN for the realization of thin-film devices

Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical-cavity surface-emitting lasers, and high-electron mobility transistors on efficient heat sinks. Such AlGaN-membranes will also enable flexible and micromechanical devices. However, to develop a method to separate the AlGaN-device membranes from the substrate has proven to be challenging, in particular, for high-quality device materials, which require the use of a lattice-matched AlGaN sacrificial layer. We demonstrate an electrochemical etching method by which it is possible to achieve complete lateral etching of an AlGaN sacrificial layer with up to 50% Al-content. The influence of etching voltage and the Al-content of the sacrificial layer on the etching process is investigated. The etched N-polar surface shows the same macroscopic topography as that of the as-grown epitaxial structure, and the root-mean square roughness is 3.5 nm for 1 \ub5m x 1 \ub5m scan areas. Separated device layers have a well-defined thickness and smooth etched surfaces. Transferred multi-quantum-well structures were fabricated and investigated by time-resolved photoluminescence measurements. The quantum wells showed no sign of degradation caused by the thin-film process

Tuneable VCSEL aiming for the application in interconnects and short haul systems

Widely tunable vertical cavity surface emitting lasers (VCSEL) are of high interest for optical communications, gas spectroscopy and fiber-Bragg-grating measurements. In this paper we present tunable VCSEL operating at wavelength around 850 nm and 1550 nm with tuning ranges up to 20 nm and 76 nm respectively. The first versions of VCSEL operating at 1550 nm with 76 nm tuning range and an output power of 1.3mW were not designed for high speed modulation, but for applications where only stable continious tuning is essential (e.g. gas sensing). The next step was the design of non tunable VCSEL showing high speed modulation frequencies of 10 GHz with side mode supression ratios beyond 50 dB. The latest version of these devices show record output powers of 6.7mW at 20 °C and 3mW at 80 °C. The emphasis of our present and future work lies on the combination of both technologies. The tunable VCSEL operating in the 850 nm-region reaches a modulation bandwidth of 5.5GHz with an output power of 0.8mW