Effect of ambient on the resistance fluctuations of graphene

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity and fast response times

Low frequency random telegraphic noise (RTN) and 1/f noise in the rare-earth manganite Pr0.63_{0.63}Ca0.37_{0.37}MnO3_3 near the charge-ordering transition

We have studied low frequency resistance fluctuations (noise) in a single crystal of the rare earth perovskite manganite Pr$_{0.63}$Ca$_{0.37}$MnO$_3$ which shows a charge ordering transition at a temperature $T_{CO}$ ~ 245K. The noise measurements were made using an ac bias with and without a dc bias current imposed on it. We find that the spectral power $S_V(f)$ contains two components - one broad band 1/f part that exists for all frequency and temperature ranges and a single frequency Lorentzian of frequency $f_c$ which is strongly temperature dependent. The Lorentzian in $S_V(f)$ which appears due to Random telegraphic noise (RTN) as seen in the time series of the fluctuation, is seen in a very narrow temperature window around $T_{CO}$ where it makes the dominating contribution to the fluctuation. When the applied dc bias is increased beyond a certain threshold current density $J_{th}$, the electrical conduction becomes non-linear and one sees appearance of a significant Lorentzian contribution in the spectral power due to RTN. We explain the appearance of the RTN as due to coexisting Charge ordered (CO) and reverse orbitally ordered (ROO) phases which are in dynamical equilibrium over a mesoscopic length scale ($\approx 30nm$) and the kinetics being controlled by an activation barrier $E_{a} ~ 0.45eV. The 1/f noise is low for$T>>T_{CO}$but increases by nearly two orders in a narrow temperature range as$T_{CO}$ is approached from above and the probability distribution function (PDF) deviates strongly from a Gaussian. We explain this behavior as due to approach of charge localization with correlated fluctuators which make the PDF non-Gaussian.Comment: 23 pages, 14 figure

1/f noise in nanowires

We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in metallic films and wires of larger dimension. Additionally, the PSD has a significant low-frequency component and the value of \alpha increases from the usual 1 to ~3/2 as the diameter d is reduced. The value of the normalized fluctuation \frac{}{R^2} also increases as the diameter d is reduced. We observe that there are new features in the 1/f noise as the size of the wire is reduced and they become more prominent as the diameter of the wires approaches 15nm. It is important to investigate the origin of the new behavior as 1/f noise may become a limiting factor in the use of metal wires of nanometer dimensions as interconnects.Comment: 9 pages, 6 figures, published in Nanotechnolog

Probing the interplay between surface and bulk states in the topological Kondo insulator SmB6_6 through conductance fluctuation spectroscopy

We present results of resistance fluctuation spectroscopy on single crystals of the predicted Kondo topological insulator material SmB$_6$. Our measurements show that at low temperatures, transport in this system takes place only through surface states. The measured noise in this temperature range arises due to Universal Conductance Fluctuations whose statistics was found to be consistent with theoretical predictions for that of two-dimensional systems in the Symplectic symmetry class. At higher temperatures, we find signatures of glassy dynamics and establish that the measured noise is caused by mobility fluctuations in the bulk. We find that, unlike the topological insulators of the dichalcogenide family, the noise in surface and bulk conduction channels in SmB$_6$ are completely uncorrelated. Our measurements establish that at sufficiently low temperatures, the bulk has no discernible contribution to electrical transport in SmB$_6$ making it an ideal platform for probing the physics of topological surface states.Comment: 9 pages, 11 figure

Contribution of the University of Burdwan and Kalyani University during 2000-19: A Scientometrics analysis

The present paper attempt to compare the contribution of two state universities of West Bengal i.e. University of Burdwan (BU) and University of Kalyani (KU) under different parameters like publication size, authorship pattern, degree of collaboration, subject, language, geographical distribution during the period 2000 to 2019 ( 20 years) by using Web of Science as a source database. The study revealed that both the universities have almost similar authorship pattern, citation distribution and prefer to publish articles in journals. The USA ranked top as the most favorite country for collaboration for both the universities

The Role of Interactions in an Electronic Fabry-Perot Interferometer Operating in the Quantum Hall Effect Regime

Interference of edge channels is expected to be a prominent tool for studying statistics of charged quasiparticles in the quantum Hall effect (QHE) [A. Stern (2008), Ann. Phys. 1:204; C. Chamon et al. (1997), Phys. Rev. B, 55:2331]. We present here a detailed study of an electronic Fabry-Perot interferometer (FPI) operating in the QHE regime [C. Chamon et al. (1997), Phys. Rev. B, 55:2331], with the phase of the interfering quasiparticles controlled by the Aharonov-Bohm (AB) effect. Our main finding is that Coulomb interactions among the electrons dominate the interference, even in a relatively large area FPI, leading to a strong dependence of the area enclosed by the interference loop on the magnetic field. In particular, for a composite edge structure, with a few independent edge channels propagating along the edge, interference of the outmost edge channel (belonging to the lowest Landau level) was insensitive to magnetic field; suggesting a constant enclosed flux. However, when any of the inner edge channels interfered, the enclosed flux decreased when the magnetic field increased. By intentionally varying the enclosed area with a biased metallic gate and observing the periodicity of the interference pattern, charges e (for integer filling factors) and e/3 (for a fractional filling factor) were found to be expelled from the FPI. Moreover, these observations provided also a novel way of detecting the charge of the interfering quasiparticles.Comment: 8 pages, 8 figure