Symmetry and topology in antiferromagnetic spintronics

Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in antiferromagnets. The corresponding N\'{e}el spin-orbit torque allowed for efficient electrical switching of antiferromagnetic moments and, in combination with electrical readout, for the demonstration of experimental antiferromagnetic memory devices. In parallel, the anomalous Hall effect was predicted and subsequently observed in antiferromagnets. A new field of spintronics based on antiferromagnets has emerged. We will focus here on the introduction into the most significant discoveries which shaped the field together with a more recent spin-off focusing on combining antiferromagnetic spintronics with topological effects, such as antiferromagnetic topological semimetals and insulators, and the interplay of antiferromagnetism, topology, and superconductivity in heterostructures.Comment: Book chapte

Spin-flop transition in uniaxial antiferromagnets: magnetic phases, reorientation effects, multidomain states

The classical spin-flop is the field-driven first-order reorientation transition in easy-axis antiferromagnets. A comprehensive phenomenological theory of easy-axis antiferromagnets displaying spin-flops is developed. It is shown how the hierarchy of magnetic coupling strengths in these antiferromagnets causes a strongly pronounced two-scale character in their magnetic phase structure. In contrast to the major part of the magnetic phase diagram, these antiferromagnets near the spin-flop region are described by an effective model akin to uniaxial ferromagnets. For a consistent theoretical description both higher-order anisotropy contributions and dipolar stray-fields have to be taken into account near the spin-flop. In particular, thermodynamically stable multidomain states exist in the spin-flop region, owing to the phase coexistence at this first-order transition. For this region, equilibrium spin-configurations and parameters of the multidomain states are derived as functions of the external magnetic field. The components of the magnetic susceptibility tensor are calculated for homogeneous and multidomain states in the vicinity of the spin-flop. The remarkable anomalies in these measurable quantities provide an efficient method to investigate magnetic states and to determine materials parameters in bulk and confined antiferromagnets, as well as in nanoscale synthetic antiferromagnets. The method is demonstrated for experimental data on the magnetic properties near the spin-flop region in the orthorhombic layered antiferromagnet (C_2H_5NH_3)_2CuCl_4.Comment: (15 pages, 12 figures; 2nd version: improved notation and figures, correction of various typos

Prospect for antiferromagnetic spintronics

Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. Current spintronics relies primarily on ferromagnets while antiferromagnets have traditionally played only a supporting role. Recently, antiferromagnets have been revisited as potential candidates for the key active elements in spintronic devices. In this paper we review approaches that have been employed for reading, writing, and storing information in antiferromagnets