Temporal and spatial variation in active layer depth in the McMurdo Sound Region, Antarctica

A soil climate monitoring network, consisting of seven automated weather stations, was established between 1999 and 2003, ranging from Minna Bluff to Granite Harbour and from near sea level to about 1700m on the edge of the polar plateau. Active layer depth was calculated for each site for eight successive summers from 1999/2000 to 2006/2007. The active layer depth varied from year to year and was deepest in the warm summer of 2001–02 at all recording sites. No trends of overall increase or decrease in active layer depth were evident across the up-to-eight years of data investigated. Average active layer depth decreased with increasing latitude from Granite Harbour (778S, active layer depth of.90 cm) to Minna Bluff (78.58S, active layer depth of 22 ± 0.4 cm), and decreased with increasing altitude from Marble Point (50m altitude, active layer depth of 49 ± 9 cm) through to Mount Fleming (1700m altitude, active layer depth of 6 ± 2 cm). When all data from the sites were grouped together and used to predict active layer depth the mean summer air temperature, mean winter air temperature, total summer solar radiation and mean summer wind speed explained 73% of the variation (R250.73)

Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

Theoretical calculation using the model solid theory is performed to design the stack of a group-IV laser based on a fully strained Ge1-xSnx active layer grown on a strain relaxed Si1-y-zGeySnz buffer/barrier layer. The degree of strain relaxation is taken into account for the calculation for the first time. The transition between the indirect and the direct band material for the active Ge1-xSnx layer is calculated as function of Sn content and strain. The required Sn content in the buffer layer needed to apply the required strain in the active layer in order to obtain a direct bandgap material is calculated. Besides, the band offset between the (partly) strain relaxed Si1-y-zGeySnz buffer layer and the Ge1-xSnx pseudomorphically grown on it is calculated. We conclude that an 80% relaxed buffer layer needs to contain 13.8% Si and 14% Sn in order to provide sufficiently high band offsets with respect to the active Ge1-xSnx layer which contains at least 6% Sn in order to obtain a direct bandgap

Microwave field effect transistor

Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad

Casimir stresses in active nematic films

We calculate the Casimir stresses in a thin layer of active fluid with nematic order. By using a stochastic hydrodynamic approach for an active fluid layer of finite thickness L, we generalize the Casimir stress for nematic liquid crystals in thermal equilibrium to active systems. We show that the active Casimir stress differs significantly from its equilibrium counterpart. For contractile activity, the active Casimir stress, although attractive like its equilibrium counterpart, diverges logarithmically as L approaches a threshold of the spontaneous flow instability from below. In contrast, for small extensile activity, it is repulsive, has no divergence at any L and has a scaling with L different from its equilibrium counterpart

Respiration of aged soil carbon during fall in permafrost peatlands enhanced by active layer deepening following wildfire but limited following thermokarst

Permafrost peatlands store globally significant amounts of soil organic carbon (SOC) that may be vulnerable to climate change. Permafrost thaw exposes deeper, older SOC to microbial activity, but SOC vulnerability to mineralization and release as carbon dioxide is likely influenced by the soil environmental conditions that follow thaw. Permafrost thaw in peat plateaus, the dominant type of permafrost peatlands in North America, occurs both through deepening of the active layer and through thermokarst. Active layer deepening exposes aged SOC to predominately oxic conditions, while thermokarst is associated with complete permafrost thaw which leads to ground subsidence, inundation and soil anoxic conditions. Thermokarst often follows active layer deepening, and wildfire is an important trigger of this sequence. We compared the mineralization rate of aged SOC at an intact peat plateau (∼70 cm oxic active layer), a burned peat plateau (∼120 cm oxic active layer), and a thermokarst bog (∼550 cm anoxic peat profile) by measuring respired 14C-CO2. Measurements were done in fall when surface temperatures were near-freezing while deeper soil temperatures were still close to their seasonal maxima. Aged SOC (1600 yrs BP) contributed 22.1 ± 11.3% and 3.5 ± 3.1% to soil respiration in the burned and intact peat plateau, respectively, indicating a fivefold higher rate of aged SOC mineralization in the burned than intact peat plateau (0.15 ± 0.07 versus 0.03 ± 0.03 g CO2-C m−2 d−1). None or minimal contribution of aged SOC to soil respiration was detected within the thermokarst bog, regardless of whether thaw had occurred decades or centuries ago. While more data from other sites and seasons are required, our study provides strong evidence of substantially increased respiration of aged SOC from burned peat plateaus with deepened active layer, while also suggesting inhibition of aged SOC respiration under anoxic conditions in thermokarst bogs

Casimir stresses in active nematic films

We calculate the Casimir stresses in a thin layer of active fluid with nematic order. By using a stochastic hydrodynamic approach for an active fluid layer of finite thickness $L$, we generalize the Casimir stress for nematic liquid crystals in thermal equilibrium to active systems. We show that the active Casimir stress differs significantly from its equilibrium counterpart. For contractile activity, the active Casimir stress, although attractive like its equilibrium counterpart, diverges logarithmically as $L$ approaches a threshold of the spontaneous flow instability from below. In contrast, for small extensile activity, it is repulsive, has no divergence at any $L$ and has a scaling with $L$ different from its equilibrium counterpart

Double-active-layer index-guided InGaAsP-InP laser diode

A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high characteristic temperature T0 was measured, and optical switching behavior was observed. A mode analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that both the Auger recombination in this special double-active-layer configuration and the temperature-dependent leakage current, which leads to uniform carrier distribution in both active regions, are essential to increase T0