Statistical Performance Modeling of SRAMs

Yield analysis is a critical step in memory designs considering a variety of performance constraints. Traditional circuit level Monte-Carlo simulations for yield estimation of Static Random Access Memory (SRAM) cell is quite time consuming due to their characteristic of low failure rate, while statistical method of yield sensitivity analysis is meaningful for its high efficiency. This thesis proposes a novel statistical model to conduct yield sensitivity prediction on SRAM cells at the simulation level, which excels regular circuit simulations in a significant runtime speedup. Based on the theory of Kriging method that is widely used in geostatistics, we develop a series of statistical model building and updating strategies to obtain satisfactory accuracy and efficiency in SRAM yield sensitivity analysis. Generally, this model applies to the yield and sensitivity evaluation with varying design parameters, under the constraints of most SRAM performance metric. Moreover, it is potentially suitable for any designated distribution of the process variation regardless of the sampling method

Surrogate based Optimization and Verification of Analog and Mixed Signal Circuits

Nonlinear Analog and Mixed Signal (AMS) circuits are very complex and expensive to design and verify. Deeper technology scaling has made these designs susceptible to noise and process variations which presents a growing concern due to the degradation in the circuit performances and risks of design failures. In fact, due to process parameters, AMS circuits like phase locked loops may present chaotic behavior that can be confused with noisy behavior. To design and verify circuits, current industrial designs rely heavily on simulation based verification and knowledge based optimization techniques. However, such techniques lack mathematical rigor necessary to catch up with the growing design constraints besides being computationally intractable. Given all aforementioned barriers, new techniques are needed to ensure that circuits are robust and optimized despite process variations and possible chaotic behavior. In this thesis, we develop a methodology for optimization and verification of AMS circuits advancing three frontiers in the variability-aware design flow. The first frontier is a robust circuit sizing methodology wherein a multi-level circuit optimization approach is proposed. The optimization is conducted in two phases. First, a global sizing phase powered by a regional sensitivity analysis to quickly scout the feasible design space that reduces the optimization search. Second, nominal sizing step based on space mapping of two AMS circuits models at different levels of abstraction is developed for the sake of breaking the re-design loop without performance penalties. The second frontier concerns a dynamics verification scheme of the circuit behavior (i.e., study the chaotic vs. stochastic circuit behavior). It is based on a surrogate generation approach and a statistical proof by contradiction technique using Gaussian Kernel measure in the state space domain. The last frontier focus on quantitative verification approaches to predict parametric yield for both a single and multiple circuit performance constraints. The single performance approach is based on a combination of geometrical intertwined reachability analysis and a non-parametric statistical verification scheme. On the other hand, the multiple performances approach involves process parameter reduction, state space based pattern matching, and multiple hypothesis testing procedures. The performance of the proposed methodology is demonstrated on several benchmark analog and mixed signal circuits. The optimization approach greatly improves computational efficiency while locating a comparable/better design point than other approaches. Moreover, great improvements were achieved using our verification methods with many orders of speedup compared to existing techniques

Analog design for manufacturability: lithography-aware analog layout retargeting

As transistor sizes shrink over time in the advanced nanometer technologies, lithography effects have become a dominant contributor of integrated circuit (IC) yield degradation. Random manufacturing variations, such as photolithographic defect or spot defect, may cause fatal functional failures, while systematic process variations, such as dose fluctuation and defocus, can result in wafer pattern distortions and in turn ruin circuit performance. This dissertation is focused on yield optimization at the circuit design stage or so-called design for manufacturability (DFM) with respect to analog ICs, which has not yet been sufficiently addressed by traditional DFM solutions. On top of a graph-based analog layout retargeting framework, in this dissertation the photolithographic defects and lithography process variations are alleviated by geometrical layout manipulation operations including wire widening, wire shifting, process variation band (PV-band) shifting, and optical proximity correction (OPC). The ultimate objective of this research is to develop efficient algorithms and methodologies in order to achieve lithography-robust analog IC layout design without circuit performance degradation