Efficient and Wideband Load Modulated Power Amplifiers for Wireless Communication

The increasing demand for mobile data traffic has resulted in new challenges and requirements for the development of the wireless communication infrastructure. With the transition to higher frequencies and multi-antenna systems, radio frequency (RF) hardware performance, especially the power amplifier (PA), becomes increasingly important. Enhancing PA energy efficiency and bandwidth is vital for maximizing channel capacity, reducing operational costs, and facilitating integration.In the first part of the thesis, the bandwidth limitations of the standard two-way Doherty PA are discussed. A comprehensive analysis is provided, and the frequency responses of different Doherty combiner networks are presented. Furthermore, a Doherty combiner network is proposed, notable for its inherent broadband frequency and its capacity to account for the influence of output parasitics and packaged components from the active devices. The introduced Doherty combiner network is experimentally verified by a wideband gallium nitride (GaN) Doherty PA operating over 1.6-2.7 GHz.In the second part of the thesis, an analytically based combiner synthesis approach for the three-stage Doherty PA is proposed and presented. A compact output combiner network, together with the input phase delays, is derived directly from transistor load-pull data and the PA design requirements. The technique opens up new design space for three-stage Doherty PAs with reconfigurable high-efficiency power back-off levels. The utility of the proposed technique is demonstrated by the implementation of a 30-W GaN three-stage Doherty PA prototype at 2.14 GHz. Measurements show that a drain efficiency of 68% and 55% is exhibited at 6- and 10-dB back-off power, respectively.In the third part, a new PA architecture named the circulator load modulated amplifier (CLMA), is proposed. This architecture utilizes active load modulation for achieving enhanced back-off efficiency. Two active devices are incorporated in this innovative architecture, and a non-reciprocal circulator-based combiner is leveraged. Following this, the sequential CLMA (SCLMA) is introduced, characterized by its ability to enhance back-off efficiency without the necessity of load modulation. GaN demonstrator circuits for both CLMA and SCLMA architectures, whether with dual-input or RF single-input, are designed and fabricated, with excellent performance being measured.\ua0The thesis contributes novel design techniques and architectures to enhance PA efficiency and bandwidth. These findings pave the way for energy-efficient and adaptable RF transmitters in future wireless communication systems

Amplifier Architectures for Wireless Communication Systems

Ever-increasing demand in modern wireless communication systems leads researchers to focus on design challenges on one of the main components of RF transmitters and receivers, namely amplifiers. On the transmitter side, enhanced efficiency and broader bandwidth over single and multiple bands on power amplifiers will help to have superior performance in communication systems. On the other hand, for the receiver side, having low noise and high gain will be necessary to ensure good quality transmission over such systems. In light of these considerations, a unique approach in design methodologies are studied with low noise amplifiers (LNAs) for RF receivers and the Doherty technique is analyzed for efficiency enhancement for power amplifiers (PA) on the transmitters. This work can be outlined in two parts. In the first part, Low Noise RF amplifier designs with Bipolar Junction Transistor (BJT) are studied to achieve better performing LNAs for receivers. The aim is to obtain a low noise figure while optimizing the bandwidth and achieving a maximum available gain. There are two designs that are operating at different center frequencies and utilizing different transistors. The first design is a wideband low-noise amplifier operating at 2 GHz with a high power BJT. The proposed design uses only distributed elements to realize the input and output matching networks. Additionally, a passive DC bias network is used instead of an active DC bias network to avoid possible complications due to the lumped elements parasitic effects. The matching networks are designed based on the reflection coefficients that are derived based on the transistor’s available regions. The second design is a low voltage standing wave ratio (VSWR) amplifier with a low noise figure operating at 3 GHz. This design is following the same method as in the first design. Both these amplifiers are designed to operate in broadband applications and can be good candidates for base stations. The second part of this work focuses on the transmitter side of communication systems. For this part, Doherty Power Amplifier (DPA) is analyzed as an efficiency enhancement technique for PAs. A modified architecture is proposed to have wider bandwidth and higher efficiency. In the proposed design, the quarter-wave impedance inverter was eliminated. The input and the output of the main and peak amplifiers are matched to the load directly. Additionally, the input and output matching networks are realized only using distributed elements. The selected transistor for this design is a 10 W Gallium Nitride (GaN). The fabricated amplifier operates at the center frequency of 2 GHz and provides 40% fractional bandwidth, 54% of maximum power-added efficiency, and 12.5 dB or better small-signal gain. The design is showing promising results to be a good candidate for better-performing transmitters over the L- and S- band

A survey on RF and microwave doherty power amplifier for mobile handset applications

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-RFundação para a Ciência e a Tecnologia | Ref. UIDP/50008/201

Advanced High Efficiency and Broadband Power Amplifiers Based on GaN HEMT for Wireless Applications

In advanced wireless communication systems, a rapid increase in the mobile data traffic and broad information bandwidth requirement can lead to the use of complex spectrally efficient modulation schemes such as orthogonal frequency-division multiplexing (OFDM). Generally, complex non-constant envelope modulated signals have very high peak-to-average ratios (PAPR). Doherty Power Amplifier (DPA) is the most commonly used power amplifier (PA) architecture for meeting high efficiency requirement in advanced communication systems, in the presence of high PAPR signals. However, limited bandwidth of the conventional DPA is often identified as a bottleneck for widespread deployment in base-station application for multi-standard communication signals. The research in this thesis focuses on the development of new designs to overcome the bandwidth limitations of a conventional PA. In particular, the bandwidth limitation factors of a conventional DPA architecture are studied. Moreover, a novel design technique is proposed for DPA’s bandwidth extension. In the first PA design, limited bandwidth and linearity problems are addressed simultaneously. For this purpose, a new Class-AB PA with extended bandwidth and improved linearity is presented for LTE 5 W pico-cell base-station over a frequency range of 1.9–2.5 GHz. A two-tone load/source-pull and bias point optimization techniques are used to extract the sweet spots for optimum efficiency and linearity from the 6 W Cree GaN HEMT device for the whole frequency band. The realized prototype presented saturated PAE higher than 60%, a power gain of 13 dB and an average output power of 36.5 dBm over the desired bandwidth. The proposed PA is also characterized by QAM-256 and LTE input communication signals for linearity characterization. Measured ACPRs are lower than -40 dBc for an input power of 17 dBm. The documented results indicate that the proposed Class-AB architecture is suitable for pico-cell base-station application. In the second PA design, an inherent bandwidth limitation of Class-F power amplifier forced by the improper load harmonics terminations at multiple harmonics is investigated and analyzed. It is demonstrated that the impedance tuning of the second and third harmonics at the drain terminal of a transistor is crucial to achieve a broadband performance. The effect of harmonics terminations on power amplifier’s bandwidth up to fourth harmonics is investigated. The implemented broadband Class-F PA achieved maximum saturated drain efficiency 60-77%, and 10 W output power throughout (1.1-2.1 GHz) band. The simulated and measured results verify that the presented Class-F PA is suitable for a high-efficiency system application in wireless communications over a wide range of frequencies. In the third PA design, a single- and dual-input DPA for LTE application in the 3.5 GHz frequency band are presented and compared. The main goal of this study is to improve the performance of gallium–nitride (GaN) Doherty transmitters over a wide bandwidth in the 3.5 GHz frequency band. For this purpose, the linearity-efficiency trade-off for the two proposed architectures is discussed in detail. Simulated results demonstrate that the single- and dual-input DPA exhibited a peak drain efficiency (DE) of 72.4% and 77%, respectively. Both the circuits showed saturated output power more than 42.9 dBm throughout the designed band. Saturated efficiency, gain and bandwidth of dual-input DPA are higher than that of the single-input DPA. On the other side, dual-input DPA linearity is worse as compared to the single-input DPA. In the last PA design, a novel design methodology for ultra-wide band DPA is presented. The bandwidth limitation factors of the conventional Doherty amplifier are discussed on the ground of broadband matching with impedance variation. To extend the DPA bandwidth, three different methods are used such as post-matching, low impedance transformation ratio and the optimization of offset line for wide bandwidth in the proposed design. The proposed Doherty power amplifier was designed and realized based on two 10 W GaN HEMT devices from Cree Inc. The measured results exhibited 42-57% of efficiency at the 6-dB back-off and saturated output power ranges from 41.5 to 43.1 dBm in the frequency range of 1.15 to 2.35 GHz (68.5% fractional bandwidth). Moreover, less than -25 dBc ACPRs are measured at 42 dBm peak output power throughout the designed band. In a nutshell, all power amplifiers presented in this thesis are suitable for wideband operation and their performances are satisfying the required operational standard. Therefore, this thesis has a significant contribution in the domain of high efficiency and broadband power amplifiers

A load modulated balanced amplifier for telecom applications

This paper presents the design and characterization of a load modulated balanced amplifier for telecom base station applications adopting a novel mode of operation. The theory of operation is described explaining the main differences compared to Doherty amplifiers, in particular the RF bandwidth advantages and, on the other hand, the intrinsic non-linear behaviour. The specific design strategy that adopts prematching for back-off broadband matching is explained in detail. A prototype, based on 25W GaN packaged devices, has been fabricated and measured with single tone CW and modulated signal stimulus. For CW conditions, on the 1.7-2.5GHz band, the peak output power is between 63W and 78W, with power added efficiency higher than 48%, 43% and 39% at saturation, 6 dB and 8 dB output power back-off, respectively. With a modulated signal for Long Term Evolution the amplifier provides an average output power of around 10W, with efficiency higher than 40%, and can be linearized by adopting a low complexity predistorter. If compared to previously published power amplifiers targeting similar power and bandwidth, the measurement shows very good performance, demonstrating the potential of this novel technique in the field of efficiency enhanced transmitters

High efficiency power amplifiers for modern mobile communications: The load-modulation approach

Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output power levels, which is a major issue for classical power amplifier architectures. Following the load-modulation approach, efficiency enhancement is achieved by dynamically changing the amplifier load impedance as a function of the input power. In this paper, a review of the widely-adopted Doherty power amplifier and of the other load-modulation efficiency enhancement techniques is presented. The main theoretical aspects behind each method are introduced, and the most relevant practical implementations available in recent literature are reported and discussed

Design of a wideband doherty power amplifier with high efficiency for 5g application

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off

Theory and Design of Efficient Active Load Modulation Power Amplifiers

The increasing demand for mobile data traffic has put new challenges and requirements for the development of the wireless communication infrastructure. The performance of the RF power amplifier (PA) is, in particular, of great importance, since it is the key building block for microwave transmitters in base stations and radio link equipment. The energy and bandwidth efficiency of the PA is vital for maximized channel capacity, reduced operational cost, and further integration. Among the efficiency enhancement techniques, active load modulation is one of the most widely used techniques. The overall objective of this thesis is to improve the average efficiency and bandwidth performance in active load modulation PAs for future wireless systems. In the first part of the thesis, an analytically based combiner synthesis approach for the three-stage Doherty PA (DPA) is proposed and presented. A compact output combiner network, together with the input phase delays, is derived directly from transistor load-pull data and the PA design requirements. The technique opens up new design space for three-stage DPAs with reconfigurable high-efficiency power back-off levels. The utility of the proposed technique is demonstrated by the implementation of a 30-W gallium nitride (GaN) three-stage DPA prototype at a center frequency of 2.14 GHz. Measurement results show that the prototype circuit can linearly reproduce 20-MHz long-term evolution signals with 8.5- and 11.5-dB peak-to-average power-ratio (PAPR), providing average efficiencies of 56.6% and 46.8% at an average output power level of 36.8 and 33.8 dBm, respectively. In the second part of the thesis, a novel PA architecture, the circulator load modulated amplifier (CLMA) is proposed and demonstrated. The CLMA is able to maintain high efficiency over large output power dynamic ranges. Moreover, the availability of wideband and low-loss circulators makes this architecture promising for wideband applications. Consequently, it has the potential to overcome many of the drawbacks of other architectures. The fundamental operational principle and theoretical performance of the CLMA are studied and presented. As a proof of concept, a demonstrator circuit based on GaN transistors is designed and characterized at 2.09 GHz. Measurement results show that the peak output power is 43.1 dBm and the drain efficiency is 73\% at 6-dB output power back-off level. In summary, the thesis presents two promising PA architectures for efficiency enhancement. The results of this thesis will therefore contribute to the development of energy efficient PAs for future mobile communication systems

High-Power Microwave/ Radio-Frequency Components, Circuits, and Subsystems for Next-Generation Wireless Radio Front-Ends

As the wireless communication systems evolve toward the future generation, intelligence will be the main signature/trend, well known as the concepts of cognitive and software-defined radios which offer ultimate data transmission speed, spectrum access, and user capacity. During this evolution, the human society may experience another round of `information revolution\u27. However, one of the major bottlenecks of this promotion lies in hardware realization, since all the aforementioned intelligent systems are required to cover a broad frequency range to support multiple communication bands and dissimilar standards. As the essential part of the hardware, power amplifiers (PAs) capable of operating over a wide bandwidth have been identified as the key enabling technology. This dissertation focuses on novel methodologies for designing and realizing broadband high-power PAs, their integration with high-quality-factor (high-Q) tunable filters, and relevant investigations on the reliabilities of these tunable devices. It can be basically divided into three major parts: 1.Broadband High-Efficiency Power Amplifiers. Obtaining high PA efficiency over a wide bandwidth is very challenging, because of the difficulty of performing broadband multi-harmonic matching. However, high efficiency is the critical feature for high-performance PAs due to the ever-increasing demands for environmental friendliness, energy saving, and longer battery life. In this research, novel design methodologies of broad-band highly efficient PAs are proposed, including the first-ever mode-transferring PA theory, novel matching network topology, and wideband reconfigurable PA architecture. These techniques significantly advance the state-of-the-art in terms of bandwidth and efficiency. 2.Co-Design of PAs and High-Q Tunable Filters. When implementing the intelligent communication systems, the conventional approach based on independent RF design philosophy suffers from many inherent defects, since no global optimization is achieved leading to degraded overall performance. An attractive method to solve these difficulties is to co-design critical modules of the transceiver chain. This dissertation presents the first-ever co-design of PAs and tunable filters, in which the redundant inter-module matching is entirely eliminated, leading to minimized size & cost and maximized overall performance. The saved hardware resources can be further transferred to enhance system functionalities. Moreover, we also demonstrate that co-design of PAs and filters can lead to more functionalities/benefits for the wireless systems, e.g. efficient and linear amplification of dual-carrier (or multi-carrier) signals. 3.High-Power/Non-Linear Study on Tunable Devices. High-power limitation/power handling is an everlasting theme of tunable devices, as it determines the operational life and is the threshold for actual industrial applications. Under high-power operation, the high RF voltage can lead to failures like tuners\u27 mechanical deflections and gas discharge in the small air spacing of the cavity. These two mechanisms are studied independently with their instantaneous and long-term effects on the device performance. In addition, an anti-biased topology of electrostatic RF MEMS varactors and tunable filters is proposed and experimentally validated for reducing the non-linear effect induced by bias-noise. These investigations will enlighten the designers on how to avoid and/or minimize the non-ideal effects, eventually leading to longer life cycle and performance sustainability of the tunable devices