Low Power Decoding Circuits for Ultra Portable Devices

A wide spread of existing and emerging battery driven wireless devices do not necessarily demand high data rates. Rather, ultra low power, portability and low cost are the most desired characteristics. Examples of such applications are wireless sensor networks (WSN), body area networks (BAN), and a variety of medical implants and health-care aids. Being small, cheap and low power for the individual transceiver nodes, let those to be used in abundance in remote places, where access for maintenance or recharging the battery is limited. In such scenarios, the lifetime of the battery, in most cases, determines the lifetime of the individual nodes. Therefore, energy consumption has to be so low that the nodes remain operational for an extended period of time, even up to a few years. It is known that using error correcting codes (ECC) in a wireless link can potentially help to reduce the transmit power considerably. However, the power consumption of the coding-decoding hardware itself is critical in an ultra low power transceiver node. Power and silicon area overhead of coding-decoding circuitry needs to be kept at a minimum in the total energy and cost budget of the transceiver node. In this thesis, low power approaches in decoding circuits in the framework of the mentioned applications and use cases are investigated. The presented work is based on the 65nm CMOS technology and is structured in four parts as follows: In the first part, goals and objectives, background theory and fundamentals of the presented work is introduced. Also, the ECC block in coordination with its surrounding environment, a low power receiver chain, is presented. Designing and implementing an ultra low power and low cost wireless transceiver node introduces challenges that requires special considerations at various levels of abstraction. Similarly, a competitive solution often occurs after a conclusive design space exploration. The proposed decoder circuits in the following parts are designed to be embedded in the low power receiver chain, that is introduced in the first part. Second part, explores analog decoding method and its capabilities to be embedded in a compact and low power transceiver node. Analog decod- ing method has been theoretically introduced over a decade ago that followed with early proof of concept circuits that promised it to be a feasible low power solution. Still, with the increased popularity of low power sensor networks, it has not been clear how an analog decoding approach performs in terms of power, silicon area, data rate and integrity of calculations in recent technologies and for low data rates. Ultra low power budget, small size requirement and more relaxed demands on data rates suggests a decoding circuit with limited complexity. Therefore, the four-state (7,5) codes are considered for hardware implementation. Simulations to chose the critical design factors are presented. Consequently, to evaluate critical specifications of the decoding circuit, three versions of analog decoding circuit with different transistor dimensions fabricated. The measurements results reveal different trade-off possibilities as well as the potentials and limitations of the analog decoding approach for the target applications. Measurements seem to be crucial, since the available computer-aided design (CAD) tools provide limited assistance and precision, given the amount of calculations and parameters that has to be included in the simulations. The largest analog decoding core (AD1) takes 0.104mm2 on silicon and the other two (AD2 and AD3) take 0.035mm2 and 0.015mm2, respectively. Consequently, coding gain in trade-off with silicon area and throughput is presented. The analog decoders operate with 0.8V supply. The achieved coding gain is 2.3 dB at bit error rates (BER)=0.001 and 10 pico-Joules per bit (pJ/b) energy efficiency is reached at 2 Mbps. Third part of this thesis, proposes an alternative low power digital decoding approach for the same codes. The desired compact and low power goal has been pursued by designing an equivalent digital decoding circuit that is fabricated in 65nm CMOS technology and operates in low voltage (near-threshold) region. The architecture of the design is optimized in system and circuit levels to propose a competitive digital alternative. Similarly, critical specifications of the decoder in terms of power, area, data rate (speed) and integrity are reported according to the measurements. The digital implementation with 0.11mm2 area, consumes minimum energy at 0.32V supply which gives 9 pJ/b energy efficiency at 125 kb/s and 2.9 dB coding gain at BER=0.001. The forth and last part, compares the proposed design alternatives based on the fabricated chips and the results attained from the measurements to conclude the most suitable solution for the considered target applications. Advantages and disadvantages of both approaches are discussed. Possible extensions of this work is introduced as future work

A Charge-Recycling Scheme and Ultra Low Voltage Self-Startup Charge Pump for Highly Energy Efficient Mixed Signal Systems-On-A-Chip

The advent of battery operated sensor-based electronic systems has provided a pressing need to design energy-efficient, ultra-low power integrated circuits as a means to improve the battery lifetime. This dissertation describes a scheme to lower the power requirement of a digital circuit through the use of charge-recycling and dynamic supply-voltage scaling techniques. The novel charge-recycling scheme proposed in this research demonstrates the feasibility of operating digital circuits using the charge scavenged from the leakage and dynamic load currents inherent to digital design. The proposed scheme efficiently gathers the “ground-bound” charge into storage capacitor banks. This reclaimed charge is then subsequently recycled to power the source digital circuit. The charge-recycling methodology has been implemented on a 12-bit Gray-code counter operating at frequencies of less than 50 MHz. The circuit has been designed in a 90-nm process and measurement results reveal more than 41% reduction in the average energy consumption of the counter. The total energy savings including the power consumed for the generation of control signals aggregates to an average of 23%. The proposed methodology can be applied to an existing digital path without any design change to the circuit but with only small loss to the performance. Potential applications of this scheme are described, specifically in wide-temperature dynamic power reduction and as a source for energy harvesters. The second part of this dissertation deals with the design and development of a self-starting, ultra-low voltage, switched-capacitor (SC) DC-DC converter that is essential to an energy harvesting system. The proposed charge-pump based SC-converter operates from 125-mV input and thus enables battery-less operation in ultra-low voltage energy harvesters. The charge pump does not require any external components or expensive post-fabrication processing to enable low-voltage operation. This design has been implemented in a 130-nm CMOS process. While the proposed charge pump provides significant efficiency enhancement in energy harvesters, it can also be incorporated within charge recycling systems to facilitate adaptable charge-recycling levels. In total, this dissertation provides key components needed for highly energy-efficient mixed signal systems-on-a-chip

Toward the implementation of analog LDPC decoders for long codewords

Error control codes are used in virtually every digital communication system. Traditionally, decoders have been implemented digitally. Analog decoders have been recently shown to have the potential to outperform digital decoders in terms of area and power/speed ratio. Analog designers have attempted to fully understand and exploit this potential for large decoders. However, large codes are generally still implemented with digital circuits. Nevertheless, in this thesis a number of aspects of analog decoder implementation are investigated with the hope of enabling the design of large analog decoders. In this thesis, we study and modify analog circuits used in a decoding algorithm known as the sum-product algorithm for implementation in a CMOS 90 nm technology. We apply a current-mode approach at the input nodes of these circuits and show through simulations that the power/speed ratio will be improved. Interested in studying the dynamics of decoders, we model an LDPC code in MATLAB's Simulink. We then apply the linearization technique on the modeled LDPC code in order to linearize the decoder about an initial state as its solution point. Challenges associated with decoder linearization are discussed. We also design and implement a chip comprised of the sum-product circuits with different configurations and sizes in order to study the effect of mismatch on the accuracy of the outputs. Unfortunately, testing of the chip fails as a result of errors in either the packaging process or fabrication

Energy Reduction Techniques to Increase Battery Life for Electronic Sensor Nodes

Preserving battery life in duty-cycled sensor nodes requires minimizing energy use in the active region. Lowering the power supply of CMOS gates down into sub-threshold mode is a good way to decrease energy. In this work, a unique technique to control the current in CMOS gates to reliably operate them in sub-threshold mode is described. Compared to the current state-of-theart for running digital gates in the sub-threshold regime, this work is often superior in its lack of complexity and in reduced variance in delay caused by process variations. In addition to presenting the design considerations, a demonstration of a complete digital design flow is given using the custom gates. An AES128 encryption/decryption engine is designed using the aforementioned digital flow in a commercial 180nm process. The resulting design has a ratio of maximum to minimum frequency variation over corners of only 50% with a 0.3V power supply where the same ratio with standard CMOS gates biased under the same supply voltage is 5600%. In addition, the custom gates are used to design a Wallace tree multiplier in an SOI 45nm process that is fully functional with an optimum energy power supply level of 0.34V with a typical operating frequency of 8 MHz having a variation over corners of 80%. For a proof of concept memory chip designed in this work, the architecture uses a logiccompatible CMOS process particularly suitable for embedded applications. The differential pair construct causes the read and refresh power to be independent of any process parameter including the within-die threshold voltage. The current stop feature keeps the read voltage transition low to further minimize read power. The bit cell operates in both single bit BASE2 and multi-bit BASE4 modes. An expression for the read signal was verified with bit cell simulations. These simulations also compare the performance impact of threshold voltage variance in the architecture with a standard gain cell. A DRAM bit cell array was fabricated in the XFab 180nm CMOS process. Measured waveforms closely match theoretical results obtained from a system simulation. The silicon retention time was measured at room temperature and is greater than 150 ms in BASE2 mode and greater than 75 ms in BASE4 mode. 180nm, 25C analysis predicts 0.8uW/Mbit refresh power at 630 MHz, the lowest in the literature. Further: the memory bit cell architecture presented here has a refresh power delay product several times lower than any other published architecture. The current controlled memory architecture in this work improves or overcomes the drawbacks of the 1T1C and gain cell memory architectures. A current controlled memory design was fabricated as a 131K bit array in an 180nm process to provide silicon proof. The bit cell configuration with shared read and write bit cells gives effectively two memory banks. The grouping of rows together into common source domains allows only two opamps to control the current in all the bit cells across the whole chip. The sense amplifiers have a globally controlled switching threshold point and keep their static power in the nano-amp range. The bit cells can operate either in BASE2 or BASE4 mode and the read bit line transitions are reduced with a current stop construct. Parts were received from the foundry in an 84-pin PLCC and were tested at a number of locations on the die. They proved to be fully functional in BASE4. The silicon retention time was measured at room temperature and was greater than four seconds

Static random-access memory designs based on different FinFET at lower technology node (7nm)

Title from PDF of title page viewed January 15, 2020Thesis advisor: Masud H ChowdhuryVitaIncludes bibliographical references (page 50-57)Thesis (M.S.)--School of Computing and Engineering. University of Missouri--Kansas City, 2019The Static Random-Access Memory (SRAM) has a significant performance impact on current nanoelectronics systems. To improve SRAM efficiency, it is important to utilize emerging technologies to overcome short-channel effects (SCE) of conventional CMOS. FinFET devices are promising emerging devices that can be utilized to improve the performance of SRAM designs at lower technology nodes. In this thesis, I present detail analysis of SRAM cells using different types of FinFET devices at 7nm technology. From the analysis, it can be concluded that the performance of both 6T and 8T SRAM designs are improved. 6T SRAM achieves a 44.97% improvement in the read energy compared to 8T SRAM. However, 6T SRAM write energy degraded by 3.16% compared to 8T SRAM. Read stability and write ability of SRAM cells are determined using Static Noise Margin and N- curve methods. Moreover, Monte Carlo simulations are performed on the SRAM cells to evaluate process variations. Simulations were done in HSPICE using 7nm Asymmetrical Underlap FinFET technology. The quasiplanar FinFET structure gained considerable attention because of the ease of the fabrication process [1] – [4]. Scaling of technology have degraded the performance of CMOS designs because of the short channel effects (SCEs) [5], [6]. Therefore, there has been upsurge in demand for FinFET devices for emerging market segments including artificial intelligence and cloud computing (AI) [8], [9], Internet of Things (IoT) [10] – [13] and biomedical [17] –[18] which have their own exclusive style of design. In recent years, many Underlapped FinFET devices were proposed to have better control of the SCEs in the sub-nanometer technologies [3], [4], [19] – [33]. Underlap on either side of the gate increases effective channel length as seen by the charge carriers. Consequently, the source-to-drain tunneling probability is improved. Moreover, edge direct tunneling leakage components can be reduced by controlling the electric field at the gate-drain junction . There is a limitation on the extent of underlap on drain or source sides because the ION is lower for larger underlap. Additionally, FinFET based designs have major width quantization issue. The width of a FinFET device increases only in quanta of silicon fin height (HFIN) [4]. The width quantization issue becomes critical for ratioed designs like SRAMs, where proper sizing of the transistors is essential for fault-free operation. FinFETs based on Design/Technology Co-Optimization (DTCO_F) approach can overcome these issues [38]. DTCO_F follows special design rules, which provides the specifications for the standard SRAM cells with special spacing rules and low leakages. The performances of 6T SRAM designs implemented by different FinFET devices are compared for different pull-up, pull down and pass gate transistor (PU: PD:PG) ratios to identify the best FinFET device for high speed and low power SRAM applications. Underlapped FinFETs (UF) and Design/Technology Co-Optimized FinFETs (DTCO_F) are used for the design and analysis. It is observed that with the PU: PD:PG ratios of 1:1:1 and 1:5:2 for the UF-SRAMs the read energy has degraded by 3.31% and 48.72% compared to the DTCO_F-SRAMs, respectively. However, the read energy with 2:5:2 ratio has improved by 32.71% in the UF-SRAM compared to the DTCO_F-SRAMs. The write energy with 1:1:1 configuration has improved by 642.27% in the UF-SRAM compared to the DTCO_F-SRAM. On the other hand, the write energy with 1:5:2 and 2:5:2 configurations have degraded by 86.26% and 96% in the UF-SRAMs compared to the DTCO_F-SRAMs. The stability and reliability of different SRAMs are also evaluated for 500mV supply. From the analysis, it can be concluded that Asymmetrical Underlapped FinFET is better for high-speed applications and DTCO FinFET for low power applications.Introduction -- Next generation high performance device: FinFET -- FinFET based SRAM bitcell designs -- Benchmarking of UF-SRAMs and DTCO-F-SRAMS -- Collaborative project -- Internship experience at INTEL and Marvell Semiconductor -- Conclusion and future wor

A versatile, scalable, and open memory architecture in CMOS 0.18 μm

A lookup table is a permanent memory storate element in which every stored value corresponds to a unique address. Range addressable lookup tables differ in that every stored value corresponds to a range of addresses. This type of memory has important applications in a recently proposed central processing unit which employs a multi-digit logarithmic number system that is well suited for digital signal processing applications. This thesis details the work done to improve range addressable lookup tables in terms of operating speed and area utilization. Two range addressable lookup table designs are proposed. Ideal design parameters are determined. An integrated circuit test platform is proposed to determine the real-world ability of these lookup tables. A case study exploring how non-linear functions can be approximated with range addressable lookup tables is presented

SRAM Compiler For Automated Memory Layout Supporting Multiple Transistor Process Technologies

This research details the design of an SRAM compiler for quickly creating SRAM blocks for Cal Poly integrated circuit (IC) designs. The compiler generates memory for two process technologies (IBM 180nm cmrf7sf and ON Semiconductor 600nm SCMOS) and requires a minimum number of specifications from the user for ease of use, while still offering the option to customize the performance for speed or area of the generated SRAM cell. By automatically creating SRAM arrays, the compiler saves the user time from having to layout and test memory and allows for quick updates and changes to a design. Memory compilers with various features already exist, but they have several disadvantages. Most memory compilers are expensive, usually only generate memory for one process technology, and don’t allow for user-defined custom SRAM cell optimizations. This free design makes it available for students and institutions that would not be able to afford an industry-made compiler. A compiler that offers multiple process technologies allows for more freedom to design in other processes if needed or desired. An attempt was made for this design to be modular for different process technologies so new processes could be added with ease; however, different process technologies have different DRC rules, making that option very difficult to attain. A customizable SRAM cell based on transistor sizing ratios allows for optimized designs in speed, area, or power, and for academic research. Even for an experienced designer, the layout of a single SRAM cell (1 bit) can take an hour. This command-line-based tool can draw a 1Kb SRAM block in seconds and a 1Mb SRAM block in about 15 minutes. In addition, this compiler also adds a manually laid out precharge circuit to each of the SRAM columns for an enhanced read operation by ensuring the bit lines have valid logic output values. Finally, an analysis on SRAM cell stability is done for creating a robust cell as the default design for the compiler. The default cell design is verified for stability during read and write operations, and has an area of 14.067 µm2 for the cmrf7sf process and 246.42 µm2 for the SCMOS process. All factors considered, this SRAM compiler design overcomes several of the drawbacks of other existing memory compilers

Demonstration of SRAM Design with LED Cube Display

There is a constant push to reduce power consumption and increase speed in transistor memory devices. The goal of this project is to improve Allegro MicroSystems’ current Static Random Access Memory technology by designing and implementing a new sense amplifier. The final design is latch based and uses positive feedback to quickly display data at the output, which stops static current flow and dramatically reduces power consumption. Additionally a three-dimensional LED structure was designed and built to display a series of letters, characters or visual effects