1 research outputs found
Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM
PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been
considered for selector-less RRAM and neuromorphic computing applications by
utilizing its current shoot-up. This current shoot-up in the PMO device is
attributed to the thermal runaway in the device. Hence, the understanding of
the ambient temperature dependence on the current shoot-up of the PMO device is
essential for the various applications that utilize the negative differential
resistance (NDR). In this paper, we characterize the ambient thermal dependence
of dc IV, accompanied by the development of analytical modeling. First, the
temperature-dependent current-voltage characteristic and shift in the threshold
voltage of the PMO device are shown experimentally. Second, a Joule heating
based thermal feedback model coupled with current transport by space charge
limited current (SCLC) is developed to explain the experimentally observed NDR
region. Finally, the model successfully predicts device behavior over a range
of experimental ambient temperatures. As an alternative to TCAD, such a compact
and accurate dc model sets up a platform to enable understanding, design with
device and systems-level simulations of memory and neuromorphic applications.Comment: 4 pages, 8 figure