3 research outputs found
Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs
We have performed a three-dimensional statistical simulation of the threshold voltage
distribution of deep submicron nMOSFETs, as a function of gate length, doping
density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare
our results with statistical simulations presented in the literature, and show that
essentially only the vertical distribution of dopants has an effect on the standard
deviation of the threshold voltage