Observation of magnetism in Au thin films

Direct magnetization measurements of thin gold films are presented. These measurements integrate the signal from the thin film under study and the magnetic contribution of the film's interface with the substrate. The diamagnetic contribution to the signal from the bulk substrate is of the same order as the noise level. we find that thin gold films can exhibit positive magnetization. The character of their magnetic behavior is strongly substrate dependent.Comment: 9 pages, 4 figure

Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films \ud

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vecto

Accurate measurement of the piezoelectric coefficient of thin films by eliminating the substrate bending effect using spatial scanning laser vibrometry

One of the major difficulties in measuring the piezoelectric coefficient d(33,f) for thin films is the elimination of the contribution from substrate bending. We show by theoretical analysis and experimental measurements that by bonding thin film piezoelectric samples to a substantial holder, the substrate bending can be minimized to a negligible level. Once the substrate bending can be effectively eliminated, single-beam laser scanning vibrometry can be used to measure the precise strain distribution of a piezoelectric thin film under converse actuation. A significant strain increase toward the inside edge of the top electrode (assuming a fully covered bottom electrode) and a corresponding strain peak in the opposite direction just outside the electrode edge were observed. These peaks were found to increase with the increasing Poisson's ratio and transverse piezoelectric coefficient of the piezoelectric thin film. This is due to the non-continuity of the electric field at the edge of the top electrode, which leads to the concentration of shear stress and electric field in the vicinity of the electrode edge. The measured d(33,f) was found to depend not only on the material properties such as the electromechanical coefficients of the piezoelectric thin films and elastic coefficients of the thin film and the substrate, but also on the geometry factors such as the thickness of the piezoelectric films, the dimensions of the electrode, and also the thickness of the substrate

Synthesis of thin-film black phosphorus on a flexible substrate

We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2/Vs, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film black phosphorus

Substrate coherency-driven octahedral rotations in perovskite oxide films

We perform first-principles density functional calculations to explore the role of substrate proximity effects on the octahedral rotation patterns in perovskite oxide superlattices. With cubic perovskite SrFeO$_3$ as our model film and tetragonal SrTiO$_3$ as the substrate, we show that in most cases the substrate octahedral rotation patterns propagate into the film across the heterointerface. We also identify elastic boundary conditions for which the enforced structural coherence induces atomic displacement patterns that are not found in the bulk phase diagram of either individual constituent. We suggest that such substrate coherency-induced octahedral texturing of thin film oxides is a promising approach for tuning the electronic structure of functional oxide thin films.Comment: 5 pages, 4 figure

Water-based peeling of thin hydrophobic films

Inks of permanent markers and water-proof cosmetics create elastic thin films upon application on a surface. Such adhesive materials are deliberately designed to exhibit water-repellent behavior. Therefore, patterns made up of these inks become resistant to moisture and cannot be cleaned by water after drying. However, we show that sufficiently slow dipping of such elastic films, which are adhered to a substrate, into a bath of pure water allows complete removal of the hydrophobic coatings. Upon dipping, the air-water interface in the bath forms a contact line on the substrate, which exerts a capillary-induced peeling force at the edge of the hydrophobic thin film. We highlight that this capillary peeling process is more effective at lower velocities of the air-liquid interface and lower viscosities. Capillary peeling not only removes such thin films from the substrate but also transfers them flawlessly onto the air-water interface