Reach-To-Grasp Movements: A Multimodal Techniques Study

The aim of the present study was to investigate the correlation between corticospinal activity, kinematics, and electromyography (EMG) associated with the execution of precision and whole-hand grasps (WHGs). To this end, motor-evoked potentials (MEPs) induced by transcranial magnetic stimulation (TMS), EMG, and 3-D motion capture data have been simultaneously recorded during the planning and the execution of prehensile actions toward either a small or a large object. Differences in the considered measures were expected to distinguish between the two types of grasping actions both in terms of action preparation and execution. The results indicate that the index finger (FDI) and the little finger (ADM) muscles showed different activation patterns during grasping execution, but only the FDI appeared to distinguish between the two types of actions during motor preparation. Kinematics analysis showed that precision grips differed from WHGs in terms of displayed fingers distance when shaping before object\u2019s contact, and in terms of timing and velocity patterns. Moreover, significant correlations suggest a relationship between the muscular activation and the temporal aspects concerned with the index finger\u2019s extension during whole-hand actions. Overall, the present data seem to suggest a crucial role played by index finger as an early \u201cmarker\u201d of differential motor preparation for different types of grasps and as a \u201cnavigator\u201d in guiding whole-hand prehensile actions. Aside from the novelty of the methodological approach characterizing the present study, the data provide new insights regarding the level of crosstalk among different levels concerned with the neuro-behavioral organization of reach-to-grasp movements

Structural and optical properties of MOCVD AllnN epilayers

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Quantum Wire-on-Well (WoW) Cell With Long Carrier Lifetime for Efficient Carrier Transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an In- GaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately 4 times as compared with a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same condition except for the substrate misorientation (0o- and 6o- off). The growth on a 6o-off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a wire-on-well structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice, and almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Effect of Dy substitution in the giant magnetocaloric properties of HoB2_{2}

Recently, a massive magnetocaloric effect near the liquefaction temperature of hydrogen has been reported in the ferromagnetic material HoB$_{2}$. Here we investigate the effects of Dy substitution in the magnetocaloric properties of Ho$_{1-x}$Dy$_{x}$B$_{2}$ alloys ($\textit{x}$ = 0, 0.3, 0.5, 0.7, 1.0). We find that the Curie temperature ($\textit{T}$$_{C}$) gradually increases upon Dy substitution, while the magnitude of the magnetic entropy change |$\Delta \textit{S}_{M}$| at $\textit{T}$ = $\textit{T}_{C}$ decreases from 0.35 to 0.15 J cm$^{-3}$ K$^{-1}$ for a field change of 5 T. Due to the presence of two magnetic transitions in these alloys, despite the change in the peak magnitude of |$\Delta \textit{S}_{M}$|, the refrigerant capacity ($\textit{RC}$) and refrigerant cooling power ($\textit{RCP}$) remains almost constant in all doping range, which as large as 5.5 J cm$^{-3}$ and 7.0 J cm$^{-3}$ for a field change of 5 T. These results imply that this series of alloys could be an exciting candidate for magnetic refrigeration in the temperature range between 10-50 K.Comment: 19 pages, 5 figures, 2 table

Photonic crystal thin films of GaAs prepared by atomic layer deposition

Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index

Growth parameters of InAs/GaAs quantum dots grown by MOVPE

Quantum dots are zero dimensional structures and therefore have superior transport and optical properties compared to either 2-dimensional or 3-dimensional structures. Quantum dots show promise for use in diode lasers, amplifiers, and biological sensors. They are also vigorously researched for use in solid-state quantum computing. Indium arsenide quantum dots are currently studied for their use in the photoelectronic and semiconductor fields. In our research, Indium Arsenide (InAs) quantum dots are grown on Gallium Arsenide (GaAs) substrate using Metal Organic Vapor Phase Epitaxy (MOVPE) in the Stranski-Krastanov Growth mode. Several parameters influence the growth of InAs quantum dots greatly. We will be describing these growth parameters, which we have identified in our current growth attempts. We are currently trying to achieve device quality InAs/GaAs quantum dots by varying these parameters we have identified. These growth parameters include the V/III ratio of both InAs and GaAs, In/As growth temperature, and quantum dot growth time. By carefully fine tuning the parameters above, we will be able to grow device quality quantum dots. Deviations from the optimized value will result in either no formation of quantum dots, or the formation of large islands which are particularly susceptible to dislocations. The effects of differing growth parameters are observed by using an Atomic Force Microscope (AFM) located at Faculty of Science, UTM. The MOVPE is located at Ibn Sina Institute for Fundamental Science Studies, UTM