A new look at the conditions for the synthesis of speed-independent circuits

This paper presents a set of sufficient conditions for the gate-level synthesis of speed-independent circuits when constrained to a given class of gate library. Existing synthesis methodologies are restricted to architectures that use simple AND-gates, and do not exploit the advantages offered by the existence of complex gates. The use of complex gates increases the speed and reduces the area of the circuits. These improvements are achieved because of (1) the elimination of the distributivity, signal persistency and unique minimal state requirements imposed by other techniques; (2) the reduction in the number of internal signals necessary to guarantee the synthesis; and finally (3) the utilization of optimization techniques to reduce the fan-in of the involved gates and the number of required memory elements.Peer ReviewedPostprint (published version

Hierarchical gate-level verification of speed-independent circuits

This paper presents a method for the verification of speed-independent circuits. The main contribution is the reduction of the circuit to a set of complex gates that makes the verification time complexity depend only on the number of state signals (C elements, RS flip-flops) of the circuit. Despite the reduction to complex gates, verification is kept exact. The specification of the environment only requires to describe the transitions of the input/output signals of the circuit and is allowed to express choice and non-determinism. Experimental results obtained from circuits with more than 500 gates show that the computational cost can be drastically reduced when using hierarchical verification.Peer ReviewedPostprint (published version

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

Parallel dynamics and computational complexity of the Bak-Sneppen model

The parallel computational complexity of the Bak-Sneppen evolution model is studied. It is shown that Bak-Sneppen histories can be generated by a massively parallel computer in a time that is polylogarithmic in the length of the history. In this parallel dynamics, histories are built up via a nested hierarchy of avalanches. Stated in another way, the main result is that the logical depth of producing a Bak-Sneppen history is exponentially less than the length of the history. This finding is surprising because the self-organized critical state of the Bak-Sneppen model has long range correlations in time and space that appear to imply that the dynamics is sequential and history dependent. The parallel dynamics for generating Bak-Sneppen histories is contrasted to standard Bak-Sneppen dynamics. Standard dynamics and an alternate method for generating histories, conditional dynamics, are both shown to be related to P-complete natural decision problems implying that they cannot be efficiently implemented in parallel.Comment: 37 pages, 12 figure

Analog Circuits in Ultra-Deep-Submicron CMOS

Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena

Reducing MOSFET 1/f Noise and Power Consumption by "Switched Biasing"

Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET's. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 ¿m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30