Slicing of single crystal and polycrystalline silicon ingots using multi-blade saws

Optimization of the Multi-Blade Slurry wafering technique was evaluated. Several wafering runs were made. Sufficient data necessary for a complete cost analysis of each of the three types of saw utilized are provided

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level

Critical study of the vertical-cavity surface emitting laser electrical access for integrated optical sub-assembly

The proposal contribution aims at highlighting the consequence of the impedance mismatching in Vertical-Cavity Surface-Emitting laser (VCSEL)-based optical subassembly for optical interconnection applications. The integration of this micro laser diode needs a particular care to avoid electromagnetic coupling which could transform the advantage of the VCSEL technology in a weakness. Indeed, the vertical emission perpendicular to the active layer gives the possibility to achieve the need of planarization of the optoelectronic circuits and the design of VCSEL arrays. That is why it is of great interest to develop an optoelectronic model including the electrical access effect. This model is based on the VCSEL rate equation comparison with a behavioural small-signal equivalent circuit. Scattering parameters of various VCSEL structures and various VCSEL chip submounts are tested. This characterization allows the validation of the laser model and emphasizes the influence of the electrical access in the light transmission. In a particular VCSEL array structure, a crosstalk phenomenon is also observed. In other cases, the frequency rise involves modification of the laser frequency response. Consequently the electrical access of the VCSEL needs to be improved in order to avoid an inadequate utilization of the VCSEL

Linear laser diode arrays for improvement in optical disk recording for space stations

The design and fabrication of individually addressable laser diode arrays for high performance magneto-optic recording systems are presented. Ten diode arrays with 30 mW cW light output, linear light vs. current characteristics and single longitudinal mode spectrum were fabricated using channel substrate planar (CSP) structures. Preliminary results on the inverse CSP structure, whose fabrication is less critically dependent on device parameters than the CSP, are also presented. The impact of systems parameters and requirements, in particular, the effect of feedback on laser design is assessed, and techniques to reduce feedback or minimize its effect on systems performance, including mode-stabilized structures, are evaluated

Nanosecond channel-switching exact optical frequency synthesizer using an optical injection phase-locked loop (OIPLL)

Experimental results are reported on an optical frequency synthesizer for use in dynamic dense wavelength-division-multiplexing networks, based on a tuneable laser in an optical injection phase-locked loop for rapid wavelength locking. The source combines high stability (50 dB), narrow linewidth (10 MHz), and fast wavelength switching (<10 ns)

Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the Low Cost Silicon Solar Array project

The limits of blade tolerance were defined. The standard blades are T-2 thickness tolerance. Good results were obtained by using a slurry fluid consisting of mineral oil and a lubricity additive. Adjustments of the formulation and fine tuning of the cutting process with the new fluid are necessary. Test results and consultation indicate that the blade breakage encountered with water based slurries is unavoidable. Two full capacity (974 wafer) runs were made on the large prototype saw. Both runs resulted in extremely low yield. However, the reasons for the low yield were lack of proper technique rather than problems with machine function. The test on the effect of amount of material etched off of an as-sawn wafer on solar cell efficiency were completed. The results agree with previous work at JPL in that the minimum material removed per side that gives maximum efficiency is on the order of 10 microns

Hybrid laser for optical communications, and transmitter, system, and method

In the interest of ease of manufacture, hybrid lasers of distributed-Bragg-reflector type are preferred for use as light sources in optical communications. Such lasers are made to operate away from mode instabilities by adjusting a laser parameter such as, e.g., laser temperature, thereby assuring highly error-free transmission. Alternatively, by suitable design of the Bragg reflector it is possible to render mode instability of negligible influence on error rate.Published versio

Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV)

Equivalent Circuit Model of High-Performance VCSELs

In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeDFG, 414044773, Open Access Publizieren 2019 - 2020 / Technische Universität Berli