5 research outputs found

    Static and dynamic behavior of memory cell array spot defects in embedded DRAMs

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    Automating defects simulation and fault modeling for SRAMs

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    The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes of realistic functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper proposes a new approach to automate this procedure. The proposed method exploits the capabilities of evolutionary algorithms to automatically identify faulty behaviors into defective memories and to define the corresponding fault models and relevant test sequences. Target defects are modeled at the electrical level in order to optimize the results to the specific technology and memory architecture

    Genetic Defect Based March Test Generation for SRAM

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    The continuos shrinking of semiconductor's nodes makes semiconductor memories increasingly prone to electrical defects tightly related to the internal structure of the memory. Exploring the effect of fabrication defects in future technologies, and identifying new classes of functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper pro- poses a new approach to automate this procedure exploiting a dedicated genetic algorithm

    PPM Reduction on Embedded Memories in System on Chip

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    This paper summarizes advanced test patterns designed to target dynamic and time-related faults caused by new defect mechanisms in deep-submicron memory technologies. Such tests are industrially evaluated together with the traditional tests at "Design of Systems on Silicon (DS2)" in Spain in order to (a) validate the used fault models and (b) investigate the added value of the new tests and their impact on the PPM level. The preliminary silicon results are presented and analyzed. They validate some of the new dynamic fault models and show the importance of considering dynamic faults for high outgoing product quality.Electrical Engineering, Mathematics and Computer Scienc

    Static and dynamic behavior of memory cell array spot defects in embedded DRAMs

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