1 research outputs found
(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices:an industry perspective
Although astounding performance is already proven by many
research papers, the widespread adoption of GaN power devices in
the market is still hampered by (1) yield and reproducibility ; (2)
cost ; (3) reliability. All three factors are to be considered, but to
convince customers to adopt GaN power devices, proven device
and product reliability is a must. Cost is kept acceptably low by
growing the GaN epi stack on 6 inch and 8inch Si substrates, and
by processing the GaN power device technology in standard
CMOS production lines.
This paper will focus on the most important intrinsic reliability
mechanisms for GaN power devices. It will cover gate dielectric
reliability, Ohmic contact reliability, accelerated drain stress
testing (high temperature reverse bias--HTRB) and high voltage
device wear-out testing (high voltage off-state stress--HVOS).
Acceleration models are discussed
A measurement strategy to extract valuable information about the
physical properties of the buffer layers (e.g. activation energies of
the traps, conduction mechanisms, \u2026) based on simple
transmission line structures, is outlined