Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid

Eere we report on the development of a new parallel, scalable and portable 3D f ~ t e element power semiconductor device simulator. The emphasis in the design of this simulator is placed on the FE grid generation, on the optimised parallel generation and assembly of the discretization mahices, and on the development of a suitable, scalable linear solvers. For discretization use topologically rectangular FE grid based on non-rectangular bricks.