60,913 research outputs found
Simulation results of an efficient defect analysis procedure
For obtaining a zero defect level, a high fault coverage with respect to the stuck-at fault model is often not sufficient as there are many defects that show a more complex behavior. In this paper, a method is presented for computing the occurrence probabilities of certain defects and the realistic fault coverage for test sets. The method is highly efficient as a pre-processing step is used for partitioning the layout and extracting the defects ranked in the order of their occurrence probabilities. The method was applied to a public domain library where defects causing a complex faulty behavior are possible. The occurrence probability of these faults was computed, and the defect coverage for different test sets was determined
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model
Hydrogen and muonium in diamond: A path-integral molecular dynamics simulation
Isolated hydrogen, deuterium, and muonium in diamond have been studied by
path-integral molecular dynamics simulations in the canonical ensemble.
Finite-temperature properties of these point defects were analyzed in the range
from 100 to 800 K. Interatomic interactions were modeled by a tight-binding
potential fitted to density-functional calculations. The most stable position
for these hydrogenic impurities is found at the C-C bond center. Vibrational
frequencies have been obtained from a linear-response approach, based on
correlations of atom displacements at finite temperatures. The results show a
large anharmonic effect in impurity vibrations at the bond center site, which
hardens the vibrational modes with respect to a harmonic approximation.
Zero-point motion causes an appreciable shift of the defect level in the
electronic gap, as a consequence of electron-phonon interaction. This defect
level goes down by 70 meV when replacing hydrogen by muonium.Comment: 11 pages, 8 figure
Automating defects simulation and fault modeling for SRAMs
The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes of realistic functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper proposes a new approach to automate this procedure. The proposed method exploits the capabilities of evolutionary algorithms to automatically identify faulty behaviors into defective memories and to define the corresponding fault models and relevant test sequences. Target defects are modeled at the electrical level in order to optimize the results to the specific technology and memory architecture
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