7,577 research outputs found

    Field Effect Transistor Nanosensor for Breast Cancer Diagnostics

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    Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical properties and small dimensions, silicon nanochannels are ideally suited for extraordinarily high sensitivity. In fact, the high surface-to-volume ratios of these systems make single molecule detection possible. Further, FET biosensors offer the benefits of high speed, low cost, and high yield manufacturing, without sacrificing the sensitivity typical for traditional optical methods in diagnostics. Top down manufacturing methods leverage advantages in Complementary Metal Oxide Semiconductor (CMOS) technologies, making richly multiplexed sensor arrays a reality. Here, we discuss the fabrication and use of silicon nanochannel FET devices as biosensors for breast cancer diagnosis and monitoring

    Detection mechanism in highly sensitive ZnO nanowires network gas sensors

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    Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries

    Sensitivity in Nanomechanical Pedestal MEMS Cantilever

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    Nanomechanical resonator-based sensing devices are used in medical diagnostics based on their high-frequency dynamic behavior. Cantilevers fall into the category of Nanomechanical resonators. It also resembles a resonator whose shape is like that of a nanowire clamped at one end. As the surface-to-volume ratio of a nanowire resonator increases due to scaling down, surface stress plays a crucial role in the mechanical behavior of a resonator. Piezoresistive MEMS cantilevers are used for vapor phase analysis of volatile compounds and gas. Studies were done to address the mass sensitivity issues and fractures associated with bioceramic and nanocomposite coatings-based cantilever resonators. The studies show how the sensing performance can be determined or tuned. Nanomechanical studies of thin films of SiCN on silicon were performed. The sharpness of the tip was found to have an influence on the tip-sample conduction mechanism useful for MEMS applicationsComment: 16 pages, 6 Figure

    Sensing with FETs - once, now and future

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    In this paper a short overview is given of the several FET-based sensor devices and the operational principle of the ISFET is summarized. Some of the shortcomings of the FET sensors were circumvented by an alternative operational mode, resulting in a device capable of acid/base concentration determination by coulometric titrant generation as well as in an original pH-static enzyme sensor. A more recent example is presented in which the ISFET is used for the on-line monitoring of fermentation processes. Future research is directed towards direct covalent coupling of organic monolayers on the silicon itself. In addition, the field-effect can be applied to the so-called semiconducting nanowire devices, ultimately making single molecule detection of charged species possible
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