Multiport semiconductor devices

Device, made of a variety of semiconductors, incorporates three or more terminals. Between at least two terminals, switching action occurs. The other terminal pair performs either another switching function or a control function. This device is useful for computer-logic or memory applications

Semiconductor devices and methods

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.Board of Regents, University of Texas Syste

Vertical field-effect transistors in III-V semiconductors

Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100-nm gate oxide) for the InP/GaInPAs MOSFET's were observed

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor device

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface

Radiation Resistant Silicon Semiconductor Devices-Patent

Improving radiation resistance of silicon semiconductor junctions by doping with lithiu

Voyager electronic parts radiation program, volume 1

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized

Overview of metal contacts technology on semiconductor

Over the past decades, researcher confronts new difficulties and breakthrough due to semiconductor innovation and these chances are evident in the endeavours that have been laid by semiconductor and optoelectronic devices. Semiconductor defined as a material which conducts electricity conditionally, hence making it useful in controlling for optoelectronic devices. It possesses intermediate conductivity, ranging between a conductor and an insulator. The superiority of metal-semiconductor plays a significant role in the performances of semiconductor devices and it is a powerful tool for improving performance in many areas of modern life