Frequency Comb Generation in 300 nm Thick SiN Concentric-Racetrack-Resonators: Overcoming the Material Dispersion Limit

Kerr nonlinearity based frequency combs and solitons have been generated from on-chip optical microresonators with high quality factors and global or local anomalous dispersion. However, fabrication of such resonators usually requires materials and/or processes that are not standard in semiconductor manufacturing facilities. Moreover, in certain frequency regimes such as visible and ultra-violet, the large normal material dispersion makes it extremely difficult to achieve anomalous dispersion. Here we present a concentric racetrack-shaped resonator that achieves anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result only in waveguides with high normal dispersion, a high intrinsic Q of 1.5 million, and a novel mode-selective coupling scheme that allows coherent combs to be generated. We also provide evidence suggestive of soliton-like pulse formation in the generated comb. Our method can achieve anomalous dispersion over moderately broad bandwidth for resonators at almost any wavelength while still maintaining material and process compatibility with high-volume semiconductor manufacturing

Design and development of a fast scan infrared detection and measurement instrument

Infrared microscope instrument measures and plots the infrared profile of semiconductor chips, transistors and integrated circuits. Infrared analyses yields information on electrical and physical properties, enabling manufacturing improvements in semiconductor performance and reliability. Operational performance and main sections of the instrument are given

Measurement science and manufacturing science research

The research program of Semiconductor Research Corp. is managed as three overlapping areas: Manufacturing Sciences, Design Sciences and Microstructure Sciences. A total of 40 universities are participating in the performance of over 200 research tasks. The goals and direction of Manufacturing Sciences research became more clearly focused through the efforts of the Manufacturing Sciences Committee of the SRC Technical Advisory Board (TAB). The mission of the SRC Manufacturing Research is the quantification, control, and understanding of semiconductor manufacturing process necessary to achieve a predictable and profitable product output in the competitive environment of the next decade. The 1994 integrated circuit factory must demonstrate a three level hierarchy of control: (1) operation control, (2) process control, and (3) process design. These levels of control are briefly discussed

Data Engineering for the Analysis of Semiconductor Manufacturing Data

We have analyzed manufacturing data from several different semiconductor manufacturing plants, using decision tree induction software called Q-YIELD. The software generates rules for predicting when a given product should be rejected. The rules are intended to help the process engineers improve the yield of the product, by helping them to discover the causes of rejection. Experience with Q-YIELD has taught us the importance of data engineering -- preprocessing the data to enable or facilitate decision tree induction. This paper discusses some of the data engineering problems we have encountered with semiconductor manufacturing data. The paper deals with two broad classes of problems: engineering the features in a feature vector representation and engineering the definition of the target concept (the classes). Manufacturing process data present special problems for feature engineering, since the data have multiple levels of granularity (detail, resolution). Engineering the target concept is important, due to our focus on understanding the past, as opposed to the more common focus in machine learning on predicting the future

Semiconductor device for generating an oscillating voltage

A semiconductor device which displays an oscillating voltage due to the creation of charge domains which includes a plurality of semiconductor layers and at least two electrodes spaced from one another in the direction of the layers, an upper of which has a composition and/or dimensions predetermined so that a charge therein balances a depletion from a surface charge of the upper layer on application of a potential difference across said electrodes. The electrodes may be in contact solely with the upper layer. A method of manufacturing the device is also provided

On Scheduling a Photolithography Process Containing Cluster Tools

Photolithography is typically the bottleneck process in semiconductor manufacturing. In this paper, we present a model for optimizing the scheduling of the photolithography process in the presence of both individual and cluster tools. The combination of these individual and cluster tools that process various layers (stages) of the semiconductor manufacturing process flow is a special type of flexible flowshop. We seek separately to minimize total weighted completion time and maximize on-time delivery performance. Experimental results suggest that our solution algorithms show promise for real world implementation as they can help to improve resource utilization, reduce job completion times, and decrease unnecessary delays in a wafer fab.Comment: 23 pages, 3 figure

Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV

Development of glass passivation method for semiconductor devices for Saturn system Quarterly progress report, 28 Sep. 1966 - 28 Mar. 1967

Material, design, and manufacturing studies to improve glass passivation of semiconductor device