Abstract Screening VDSM Outliers using Nominal and Subthreshold Supply Voltage IDDQ

Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing ™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The screen is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck-at and other IDDQ screens. 1