Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: ($i$) an $in\:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.Comment: 11 pages of scientific paper, 10 high-resolution color figures. Supplemental information on the thermodynamic problem available (PDF). High-resolution abstract graphic available (PNG). Original research (2016

Formation of Nickel-Platinum Silicides on a Silicon Substrate: Structure, Phase Stability, and Diffusion from Ab initio Computations

The formation of Ni(Pt)silicides on a Si(001) surface is investigated using an ab initio approach. After deposition of a Ni overlayer alloyed with Pt, the calculations reveal fast diffusion of Ni atoms into the Si lattice, which leads initially to the formation of Ni2Si. At the same time Si atoms are found to diffuse into the metallic overlayer. The transformation of Ni2Si into NiSi is likely to proceed via a vacancy-assisted diffusion mechanism. Silicon atoms are the main diffusing species in this transformation, migrating from the Si substrate through the growing NiSi layer into the Ni2Si. Pt atoms have a low solubility in Ni2Si and prefer Si-sites in the NiSi lattice, thereby stabilizing the NiSi phase. The diffusivity of Pt is lower than that of Ni. Furthermore, Pt atoms have a tendency to segregate to interfaces, thereby acting as diffusion barriers.Comment: 36 pages, 9 tables, 6 figure

The chemistry of La on the Si(001) surface

This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a stable phase at a coverage of 1/5 monolayer. At 1/3 monolayer we predict a chemically rather inert, stable phase. La changes its oxidation state from La(3+) at lower coverages to La(2+) at coverages beyond 1/3 monolayer. In the latter oxidation state, one electron resides in a state with a considerable contribution from La-d and f states.Comment: 10 pages, 13 figures, 3 table

Analysis of thin-film structures with nuclear backscattering and x-ray diffraction

Backscattering of MeV ^(4)He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO_2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin-film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO_2 to illustrate the major features of these analysis techniques. We also give a general review of recent studies of silicide formation

The texture of thin NiSi films and its effect on agglomeration

Nickel silicide films are used as contacting materials in the micro electronics industry. It was recently [1] discovered that these films exhibit a peculiar type of texture, which was called 'axiotaxy', whereby certain lattice planes in the NiSi grains are preferentially aligned to (110)-type lattice planes in the single crystal Si substrate. In this contribution, we present a quantitative study of this phenomenon, using both XRD pole figure measurements and EBSD. Furthermore, we report a correlation between the texture of these NiSi films and their morphological stability during annealing at high temperature. In spite of the small grain size in these films, EBSD could be used to determine the volume fractions of the various texture components. This provided quantitative support for the claim that axiotaxy is the main texture component in these films, as about 40% of the grains belong to one of the axiotaxial texture components, and the remaining fraction exhibits a random orientation. A discussion of the techniques used during the measurement and analysis of the EBSD data is presented, as this must be given special consideration in view of the peculiar type of texture encountered in these films. Secondly, both XRD and EBSD were performed after annealing the NiSi films at various temperatures and durations. It is known that thin NiSi films have a strong tendency to agglomerate [2]. Our data indicates a correlation between the texture evolution and the agglomeration of the NiSi layer. Grains with axiotaxial orientation were observed to grow and thicken during the annealing process, by consuming neighboring randomly oriented grains. This suggests that the texture of the NiSi layer is a determining factor for the morphological stability of the film. The fact that grains with axiotaxial orientation grow during heat treatment can be related to the one dimensional periodicity at the interface, which lowers the interface energy and thus provides a driving force for the preferred growth of these grains. The agglomeration of NiSi films results in a significant increase of the sheet resistance. Therefore, these results illustrate the importance of texture control for the application of these films as contacts in micro-electronic devices